FAD6263M1X

The ON Semiconductor FAD6263M1X is a high-voltage half-bridge gate driver IC designed for driving power MOSFETs or IGBTs in a half-bridge configuration. It utilizes a bootstrap technique for proper high-side power switch drive and operates with a single input.

Key electrical specifications include a high voltage range of up to 600 V, DV/dt immunity of ±50 V/ns, and matched propagation delay of 100 ns. The gate drive supply range is from 10 V to 22 V, with output source/sink current capability of 3 A / 3 A. It supports 3.3 V and 5 V input logic and features extended allowable negative bridge pin voltage swing to -10 V for signal propagation.

This device incorporates essential protection features such as shoot-through protection with adjustable dead-time and under-voltage lockout (UVLO) for both channels. It also includes a shutdown pin with a latched fault state. The FAD6263M1X is AEC-Q100 qualified and PPAP capable, making it suitable for automotive applications.

The FAD6263M1X is supplied in a 16-SOIC package, designed for surface mount applications. Its robust design and comprehensive features make it an ideal choice for motor control applications like fans, pumps, and compressors, as well as general-purpose MOSFET and IGBT driver applications.