| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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24 pcs
|
24 pcs | On Request | 1 | On Request | On Request | 22+23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Diode Type | |
| Mounting Type | |
| SVHC Present |
The F3L225R12W3H3 B11 is a high-power insulated gate bipolar transistor (IGBT) module manufactured by Infineon. Designed for demanding power conversion systems, this component integrates a TRENCHSTOP IGBT H3 chip with an Emitter Controlled 7 diode. The module supports a maximum collector-emitter voltage of 1200 V and delivers a continuous collector current of 225 A, with a pulsed current rating of 450 A.
Engineering integration is simplified through the inclusion of an integrated NTC temperature sensor, allowing precise thermal monitoring within the system. The device employs a PressFIT mounting type, which facilitates automated assembly and reduces mechanical stress on the printed circuit board compared to traditional soldering methods. This mounting approach ensures reliable electrical connections in high-vibration environments.
Packaged in an EasyPACK form factor, the module offers a compact footprint suitable for space-constrained industrial drives, renewable energy inverters, and traction applications. The combination of advanced semiconductor technology and robust mechanical design provides a stable solution for high-efficiency power switching requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $103.07 | $103.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200 V
225 A
PressFIT
Yes, it has an integrated NTC temperature sensor.
EasyPACK module