| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
650 pcs
|
650 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| SVHC Present |
The ET6300 is an N-Channel Enhancement-Mode MOSFET manufactured by ETERNAL Semiconductor. It is designed with a super high density cell structure for extremely low RDS(ON) and exceptional DC current capability.
Key electrical specifications include a 30V drain-source breakdown voltage (BVDSS) and a continuous drain current (ID) of 45A at 25°C. The on-resistance (RDS(ON)) is as low as 12mΩ at VGS = 4.5V, ID=10A, and 7.9mΩ at VGS = 10V, ID=20A. It features a gate threshold voltage (VGS(th)) typically around 1.9V.
This MOSFET operates within a junction and storage temperature range of -55°C to +150°C. It is packaged in a PDFN3.3*3.3 package suitable for surface mounting.
The ET6300 is lead-free and halogen-free, indicating its suitability for environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (BVDSS) for the ET6300 is 30V.
The ET6300 MOSFET has a continuous drain current (ID) of 45A at 25°C and 28A at 75°C.
The on-resistance (RDS(ON)) is a maximum of 12mΩ at VGS = 4.5V, ID=10A, and a maximum of 7.9mΩ at VGS = 10V, ID=20A.
The ET6300 MOSFET is supplied in a PDFN3.3*3.3 package.
The operating junction and storage temperature range for the ET6300 is -55°C to +150°C.
Yes, the ET6300 MOSFET is lead-free and halogen-free.