| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,782 pcs
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2782 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ESM2012DV from STMicroelectronics is a high-performance NPN Darlington transistor. It is designed for demanding applications requiring significant current handling and voltage capability. This transistor features a maximum collector current of 120A and a collector-emitter breakdown voltage of 120V.
With a maximum power dissipation of 175W and a DC current gain (hFE) of 1200 at 100A and 5V, the ESM2012DV offers robust performance. The saturation voltage (Vce Sat) is specified at a maximum of 1.5V at 1A/100A.
This component is housed in an ISOTOP package, suitable for chassis mounting. The operating temperature range extends up to 150°C (TJ), making it suitable for various thermal environments. Its NPN Darlington configuration provides high current gain, beneficial for power switching and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
120A.
120V.
175W.
ISOTOP, chassis mount.
Maximum junction temperature is 150°C.
1200 at 100A collector current and 5V collector-emitter voltage.
1.5V maximum at 1A base current and 100A collector current.