Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,336 pcs
|
2336 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ESM2012DV is an NPN Darlington transistor manufactured by STMicroelectronics. It is designed for high-current switching applications requiring high gain. The device features a maximum collector-emitter voltage of 120V and a continuous collector current rating of 120A. With a power dissipation of 175W, it can handle substantial power levels. The DC current gain (hFE) is a minimum of 1200 at a collector current of 100A and Vce of 5V, providing high current amplification. The collector-emitter saturation voltage is typically 1.5V at a base current of 1A and collector current of 100A. The device is housed in an ISOTOP package, which is a rugged, chassis-mountable package suitable for industrial and power applications. The operating junction temperature range extends up to 150°C. The ESM2012DV is RoHS3 compliant and has an MSL rating of 1 (unlimited). It is commonly used in motor control, power supplies, and other high-current switching circuits.
| Qty | Low | High |
|---|---|---|
| 100+ | $16.80 | $16.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
120V.
120A.
175W.
Minimum 1200 at 100A collector current and 5V Vce.
Maximum 1.5V at 1A base current and 100A collector current.
Maximum 150°C.
ISOTOP (chassis mount).