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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,226,162 pcs
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4226162 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Clamping Voltage (Typical @ IPP = 1 A) | |
| Clamping Voltage (Typical @ IPP = 16 A, IEC 61000-4-2 Level 4 equivalent) | |
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| Halogen Free | |
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| Tape & Reel | |
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The ESDM3051N2T5G is a 5V ESD protection diode from On Semiconductor designed to protect sensitive components from electrostatic discharge and transient voltage events. It features a reverse working voltage of 5V and a breakdown voltage range of 5.1V to 7.0V at 1mA. The clamping voltage is 6.0V typical at 1A peak pulse current and 8.2V typical at 8A, ensuring robust protection for low-voltage circuits.
With a low leakage current of 0.1µA at 5V and a junction capacitance of 21pF, this diode is ideal for high-speed data lines such as USB, audio, and GPIO interfaces. It meets IEC 61000-4-2 Level 4 ESD protection with ±30kV contact and air discharge ratings.
Packaged in a miniature 2-XDFN (2-X2DFN 1x0.6) surface mount package with dimensions 0.62mm x 0.32mm x 0.3mm, it is suitable for space-constrained designs. The device operates over a junction temperature range of -55°C to 150°C and comes in tape and reel packaging with 8000 pieces per reel.
The standoff voltage (reverse working voltage) is 5V.
The breakdown voltage ranges from 5.1V to 7.0V at 1mA test current.
Typical clamping voltage is 6.0V at 1A and 8.2V at 8A (8/20µs pulse).
The peak pulse current is 9.9A typical for an 8/20µs waveform.
It comes in a 2-XDFN package (2-X2DFN 1x0.6) with dimensions 0.62mm x 0.32mm x 0.3mm.
The reverse leakage current is 0.1µA typical at 5V.
It provides IEC 61000-4-2 Level 4 ESD protection with ±30kV contact and ±30kV air discharge.