| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,050 pcs
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7050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Bidirectional Channels | |
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| ESD Protection | |
| Halogen Free | |
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| Power Line Protection | |
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| Thermal Resistance Junction-to-Ambient | |
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| clamping_voltage (Typical @ IPP = -8 A) | |
| clamping_voltage (Typical @ IPP=16 A, TLP pulse) |
The ESDM3033N2T5G is a bidirectional ESD protection diode from On Semiconductor, designed to protect voltage-sensitive components from electrostatic discharge and transient voltage events. It features a reverse standoff voltage of 3.3V and a breakdown voltage range of 5.1V to 7.0V at 1mA. The device offers excellent clamping capability with a typical clamping voltage of 6.0V at 1A and 8.2V at 8A, ensuring robust protection for downstream circuitry.
This diode provides IEC 61000-4-2 Level 4 ESD protection with ±30kV contact and air discharge ratings. It has a low leakage current of 0.1µA at 3.3V and a maximum junction capacitance of 21pF at 1MHz, making it suitable for high-speed data lines. The device is housed in a compact 2-X2DFN package measuring 1.0mm x 0.6mm x 0.37mm, ideal for space-constrained designs.
The ESDM3033N2T5G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. It is suitable for USB ID line protection, SD card protection, audio line protection, and GPIO applications.
The reverse standoff voltage is 3.3V.
The breakdown voltage is 5.1V minimum to 7.0V maximum at 1mA.
The typical clamping voltage is 6.0V at 1A.
The typical peak pulse current is 9.9A with an 8/20µs waveform.
It comes in a 2-X2DFN surface mount package with dimensions 1.0mm x 0.6mm x 0.37mm.
It provides ±30kV contact and ±30kV air discharge per IEC 61000-4-2.
Yes, the device is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.