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ESDM1131MX4T5G ESDM1131MX4T5G is a 3.3V ESD protection diode from onsemi in a micro 01005 (2-X4DFN) package. It features ±16kV IEC 61000-4-2 ESD protection, low 4pF capacitance, and low clamping voltage.
Mfr Part #:

ESDM1131MX4T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
ESDM1131MX4T5G is a 3.3V ESD protection diode from onsemi in a micro 01005 (2-X4DFN) package. It features ±16kV IEC 61000-4-2 ESD protection, low 4pF capacitance, and low clamping voltage.
Total Stock: 90,000 pcs

ESDM1131MX4T5G Available from 1 distributors

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ESDM1131MX4T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Applications
Bidirectional Channels
Breakdown Voltage (Vbr)
Capacitance (Cj)
Capacitance @ Frequency
Clamping Voltage (Typical @ IPP=16 A, TLP (100 ns, 4 ns rise)
Clamping Voltage (Typical @ IPP=4 A, 8 x 20 µs pulse)
Clamping Voltage (Typical @ IPP=8 A, TLP (100 ns, 4 ns rise)
ESD Rating (IEC 61000-4-2) (Minimum @ Air discharge)
ESD Rating (IEC 61000-4-2) (Minimum @ Contact discharge)
Halogen Free
Lead Solder Temperature
Mounting Type
Number of Bidirectional Channels
Operating Junction Temperature Range
Operating Temperature
Package / Case
Power Line Protection
Reverse Leakage Current (IR)
Reverse Standoff Voltage (Vrwm)
Standard Package Quantity
Storage Temperature Range
Supplier Device Package
Tape & Reel
Termination Style
Type
Voltage

ESDM1131MX4T5G Description

Short technical summary and product information.

The ESDM1131MX4T5G is a single-channel bidirectional TVS diode designed to protect sensitive electronic components from electrostatic discharge (ESD).

 

This device offers ±16kV contact and air discharge ESD protection per IEC 61000-4-2 Level 4, with a low typical clamping voltage of 5.6V at 4A (8x20µs pulse). It features a reverse standoff voltage of 3.3V, breakdown voltage range of 4.0V to 6.0V (at 1mA), and very low reverse leakage current of 0.1µA.

 

With a typical capacitance of 4pF (at 0V, 1MHz), it is suitable for high-speed data line protection in portable electronics. The device is housed in an ultra-small 01005 (0402 metric) 2-X4DFN package measuring only 0.445mm x 0.240mm, making it ideal for space-constrained applications.

 

The ESDM1131MX4T5G is Pb-free, halogen-free/BFR-free, and RoHS3 compliant. It is supplied in tape and reel packaging with a standard quantity of 10,000 pieces per reel.

ESDM1131MX4T5G Quick Information

Product Type: TVS Diode (ESD Protection Diode)
Canonical Name: ESDM1131MX4T5G TVS Diode, 3.3V Reverse Standoff, 5.6V Clamping, 1-Channel Bidirectional, 2-X4DFN
Subcategory: ESD Protection Diode

ESDM1131MX4T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

ESDM1131MX4T5G Features

  • ±16kV ESD protection per IEC 61000-4-2.
  • Low clamping voltage of 5.6V at 4A.
  • Ultra-small 01005 (2-X4DFN) package.
  • Low capacitance of 4pF typical.
  • Pb-free, halogen-free, RoHS3 compliant.

ESDM1131MX4T5G Applications

  • ESD protection for smartphone interfaces.
  • Protection for smart-wearable electronics.
  • Suitable for high-speed data lines.
  • Ideal for space-constrained portable designs.

ESDM1131MX4T5G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the reverse standoff voltage (VRWM) of the ESDM1131MX4T5G?

The reverse standoff voltage is 3.3V.

What is the breakdown voltage range?

The breakdown voltage is 4.0V minimum, 5.0V typical, and 6.0V maximum at 1mA test current.

What is the clamping voltage?

The typical clamping voltage is 5.6V at 4A peak pulse current (8x20µs pulse).

What package does the ESDM1131MX4T5G come in?

It comes in a 01005 (0402 metric) 2-X4DFN package measuring 0.445mm x 0.240mm.

What is the ESD rating?

It is rated for ±16kV contact and ±16kV air discharge per IEC 61000-4-2 (Level 4).

What is the capacitance of the ESDM1131MX4T5G?

The typical capacitance is 4pF at 0V bias and 1MHz.

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