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ESDM1051MX4T5G 5.5V bidirectional TVS diode for ESD protection. Features 30kV contact/air discharge, low leakage 0.1µA, and ultra-small 01005 package.
Mfr Part #:

ESDM1051MX4T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
5.5V bidirectional TVS diode for ESD protection. Features 30kV contact/air discharge, low leakage 0.1µA, and ultra-small 01005 package.
Total Stock: 399,077 pcs

ESDM1051MX4T5G Available from 1 distributors

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ESDM1051MX4T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
(Reverse) Peak Pulse Current
Applications
Bidirectional Channels
Breakdown Voltage
Capacitance @ Frequency
Current
Dynamic Resistance
ESD Protection (Air)
ESD Protection (Contact)
Halogen Free
Junction Capacitance
Lead Solder Temperature
Mounting Type
Operating Temperature
Operating Temperature Range
Package / Case
Power Line Protection
Reverse Leakage Current
Reverse Working Voltage
Shipping Method
Standard Package Quantity
Storage Temperature Range
Supplier Device Package
Type
Voltage
clamping_voltage (Typical @ IPP = 8 A, IEC 61000-4-2 Level 2 equivalent)
clamping_voltage (Typical @ IPP=16 A, IEC 61000-4-2 Level 2 equivalent)
clamping_voltage (Typical/Maximum @ IPP=11 A, 8/20 µs pulse)

ESDM1051MX4T5G Description

Short technical summary and product information.

The ESDM1051MX4T5G is a bidirectional TVS diode designed for ESD protection in space-constrained applications. It provides ±30kV contact and air discharge protection per IEC 61000-4-2, exceeding Level 4 requirements. The device features a reverse working voltage of 5.5V, a typical breakdown voltage of 6.8V (6.1V min, 8.2V max at 1mA), and a low clamping voltage of 7.5V typical at 8A pulse current. Reverse leakage current is limited to 0.1µA at 5.5V.

 

With a typical junction capacitance of 22pF (25pF max at 1MHz), this diode is suitable for high-speed data lines without significant signal degradation. The dynamic resistance is 0.11Ω typical, ensuring fast response to ESD events. It can handle peak pulse currents up to 13A max (8/20µs waveform).

 

The device comes in an ultra-compact 01005 (0.445 x 0.240 mm) X4DFN2 package with a low profile, making it ideal for smartphones, smartwatches, and other portable/wearable electronics where board space is at a premium. Mounting type is surface mount, and it is supplied in tape and reel packaging (10,000 pcs per reel).

 

The ESDM1051MX4T5G is Pb-free, Halogen Free/BFR Free, and RoHS3 compliant. Operating temperature range is -55°C to 125°C.

ESDM1051MX4T5G Quick Information

Product Type: TVS Diode
Series: ESDM1051
Canonical Name: ESDM1051MX4T5G - 5.5V Bidirectional TVS Diode, 01005 X4DFN Package
Subcategory: ESD Protection Diodes

ESDM1051MX4T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

ESDM1051MX4T5G Features

  • Bidirectional Zener TVS diode for ESD.
  • Reverse working voltage of 5.5V.
  • ESD protection ±30kV contact and air.
  • Ultra-small 01005 X4DFN2 package.
  • Low leakage current 0.1µA maximum.

ESDM1051MX4T5G Applications

  • Protect high-speed data lines in smartphones.
  • Used in wearable electronics and smartwatches.
  • Ideal for portable devices with tight board space.
  • Suitable for I/O pin ESD protection.

ESDM1051MX4T5G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the reverse standoff voltage of the ESDM1051MX4T5G?

The reverse working voltage (standoff voltage) is 5.5V maximum.

What is the breakdown voltage of this TVS diode?

The breakdown voltage (at 1mA, I/O pin to GND) ranges from 6.1V minimum, 6.8V typical, to 8.2V maximum.

What is the clamping voltage of the ESDM1051MX4T5G?

Clamping voltage is 7.5V typical at 8A (IEC 61000-4-2 equivalent), 8.4V typical at 16A, and 8.0V typical (8.8V max) at 11A (8/20µs pulse).

What is the peak pulse current rating?

The peak pulse current (8/20µs) is 11A typical, 13A maximum.

What package does the ESDM1051MX4T5G come in?

It comes in an 01005 (0402 metric) X4DFN2 package with dimensions 0.445 x 0.240 mm. Supplier device package is 2-X4DFN (0.45x0.24).

What is the junction capacitance of this device?

Junction capacitance (at Vr=0V, f=1MHz) is 22pF typical, 25pF maximum.

What ESD protection levels does it provide?

It provides ±30kV contact discharge and ±30kV air discharge per IEC 61000-4-2.

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