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ESD8451N2T5G Low capacitance ESD protection diode rated for 3.3V reverse working voltage with ultra-low capacitance of 0.30pF max. Provides ±15kV ESD protection per IEC 61000-4-2 in a compact XDFN2 (SOD-882) package.
Mfr Part #:

ESD8451N2T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Low capacitance ESD protection diode rated for 3.3V reverse working voltage with ultra-low capacitance of 0.30pF max. Provides ±15kV ESD protection per IEC 61000-4-2 in a compact XDFN2 (SOD-882) package.
Total Stock: 184,000 pcs

ESD8451N2T5G Available from 1 distributors

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ESD8451N2T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Applications
Bidirectional Channels
Breakdown Voltage
Capacitance @ Frequency
Clamping Voltage (@ IPP = 5 A, 8/20 µs pulse)
Clamping Voltage (Unspecified condition)
Current
ESD Rating (IEC 61000-4-2 Air)
ESD Rating (IEC 61000-4-2 Contact)
Halogen Free
Holding Reverse Current
Lead Solder Temperature
Mounting Type
Operating Temperature
Operating Temperature Range
Package / Case
Package / Case Code
Peak Pulse Current (100 ns)
Peak Pulse Current (@ 8/20 µs pulse)
Power Line Protection
Reverse Holding Voltage
Reverse Leakage Current
Reverse Working Voltage
Storage Temperature Range
Supplier Device Package
Type
Voltage
capacitance (Maximum @ 1 MHz, I/O to GND)
capacitance (Typical @ 1 MHz)

ESD8451N2T5G Description

Short technical summary and product information.

The ESD8451N2T5G is a low capacitance ESD protection diode from ON Semiconductor, designed to protect high-speed data lines from electrostatic discharge (ESD). It features an ultra-low capacitance of 0.30 pF maximum, minimizing signal degradation. The device provides bidirectional protection with a working peak voltage of 3.3 V and a typical breakdown voltage of 7.9 V. Clamping voltage is 17 V at a peak pulse current of 5 A (8/20 µs pulse). It meets IEC 61000-4-2 Level 4 ESD protection with ±15 kV contact and air discharge ratings.

 

The diode is housed in a compact 2-XDFN (XDFN2, SOD-882) surface mount package. Typical applications include USB 3.0, MHL 2.0, and eSATA interfaces. The device is RoHS, Halogen-Free, and Pb-Free compliant. Operating temperature range is -55°C to 125°C.

ESD8451N2T5G Quick Information

Product Type: TVS Diode (ESD Protection Diode)
Canonical Name: ESD8451N2T5G - Low Capacitance ESD Protection Diode
Subcategory: TVS - Diodes

ESD8451N2T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

ESD8451N2T5G Features

  • Ultra-low capacitance of 0.30pF max.
  • Bidirectional ESD protection for high-speed lines.
  • ±15kV IEC 61000-4-2 ESD protection.
  • Compact XDFN2 (SOD-882) surface mount package.
  • RoHS and Halogen-Free compliant.

ESD8451N2T5G Applications

  • Protects USB 3.0 data lines from ESD.
  • Ideal for MHL 2.0 interfaces.
  • Used in eSATA high-speed connections.
  • Suitable for general purpose ESD protection.
  • Protects voltage sensitive high-speed data lines.

ESD8451N2T5G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the standoff voltage (reverse working voltage) of the ESD8451N2T5G?

The maximum reverse working voltage (VRWM) is 3.3V.

What is the breakdown voltage range?

The breakdown voltage (VBR) at 1mA is 5.5V min, 7.9V typ, 8.3V max.

What is the clamping voltage?

The clamping voltage is 17V at a peak pulse current of 5A (8/20µs pulse).

What is the peak pulse current rating?

The peak pulse current is 5A for an 8/20µs pulse.

What package options are available?

The device is offered in a 2-XDFN package, also known as XDFN2 (SOD-882).

What is the capacitance of the ESD8451N2T5G?

The typical capacitance is 0.2pF with a maximum of 0.30pF at 1MHz.

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