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ESD8351XV2T1G ESD8351XV2T1G is a low capacitance ESD protection diode from On Semiconductor, designed to protect high speed data lines from ESD. It features a working voltage of 3.3V, typical clamping voltage of 11.2V, and ultra-low capacitance of 0.4 pF.
Mfr Part #:

ESD8351XV2T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
ESD8351XV2T1G is a low capacitance ESD protection diode from On Semiconductor, designed to protect high speed data lines from ESD. It features a working voltage of 3.3V, typical clamping voltage of 11.2V, and ultra-low capacitance of 0.4 pF.
Total Stock: 4,794 pcs

ESD8351XV2T1G Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,530 pcs
2530 pcs On Request 1 On Request On Request On Request On Request On Request
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2,264 pcs
2264 pcs On Request 1 On Request On Request On Request On Request On Request

ESD8351XV2T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Applications
Breakdown Voltage
Capacitance @ Frequency
Clamping Voltage
Current
ESD Air Discharge (Max)
ESD Contact Discharge (Max)
ESD Discharge (Max)
Halogen Free
Holding Reverse Current (Typical)
Holding Reverse Voltage (Typical)
Junction Temperature Range (Max)
Lead Solder Temperature (Max)
Mounting Type
Operating Temperature
Operating Temperature Range
Package / Case
Peak Pulse Current Max
Power Line Protection
Reverse Leakage Current (Max)
Reverse Working Voltage (Max)
Storage Temperature Range
Supplier Device Package
Type
Unidirectional Channels
Voltage

ESD8351XV2T1G Description

Short technical summary and product information.

The ESD8351XV2T1G is a low capacitance ESD protection diode from On Semiconductor, designed to protect high speed data lines from electrostatic discharge (ESD). This device is part of the ESD8351 Series and offers ultra-low capacitance of 0.4 pF typical, making it ideal for high-speed data interfaces such as USB 2.0 and eSATA. The diode provides a reverse working voltage of 3.3 V and a typical clamping voltage of 11.2 V at 8 A peak pulse current. It can withstand ESD contact and air discharges up to 15 kV per IEC 61000-4-2 and up to 30 kV per ISO 10605. The device is housed in a surface mount SOD-523 (SC-79) package, allowing for compact PCB layouts. It is RoHS compliant, lead-free, and halogen-free.

ESD8351XV2T1G Quick Information

Product Type: TVS Diode (ESD Protection)
Series: ESD8351 Series
Canonical Name: ESD8351XV2T1G Low Capacitance ESD Protection Diode
Subcategory: TVS Diodes

ESD8351XV2T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

ESD8351XV2T1G Features

  • Ultra-low capacitance of 0.4 pF typical.
  • Protects high speed data lines from ESD.
  • IEC 61000-4-2 Level 4 ESD protection.
  • SOD-523 surface mount package.
  • RoHS compliant and lead-free.

ESD8351XV2T1G Applications

  • Protects USB 2.0 data lines.
  • Suitable for eSATA interfaces.
  • Used in mobile and portable devices.
  • Ideal for HDMI and DisplayPort.
  • Protects automotive infotainment systems.

ESD8351XV2T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the standoff voltage (reverse working voltage) of the ESD8351XV2T1G?

The maximum reverse working voltage is 3.3 V.

What is the breakdown voltage range?

The breakdown voltage is 5.5 V minimum, 7.0 V typical, and 7.8 V maximum at 1 mA.

What is the clamping voltage?

The typical clamping voltage is 11.2 V at 8 A peak pulse current.

What is the maximum peak pulse current?

The maximum peak pulse current is 5 A (8/20 µs at 25°C).

What is the package type for ESD8351XV2T1G?

The device is available in SOD-523 (SC-79) surface mount package.

What is the capacitance of this ESD protection diode?

The typical capacitance is 0.4 pF at 1 MHz.

What is the ESD withstand rating?

It can withstand contact and air discharges up to 15 kV per IEC 61000-4-2 and up to 30 kV per ISO 10605.

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