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ESD8351HT1G TVS diode with 3.3V reverse standoff voltage, 5A peak pulse current, and ultra-low capacitance of 0.37 pF typical. Designed for high-speed data line ESD protection.
Mfr Part #:

ESD8351HT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
TVS diode with 3.3V reverse standoff voltage, 5A peak pulse current, and ultra-low capacitance of 0.37 pF typical. Designed for high-speed data line ESD protection.
Total Stock: 4,000 pcs

ESD8351HT1G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

ESD8351HT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Applications
Breakdown Voltage
Capacitance (Typical/Maximum @ f = 1 MHz, I/O to GND)
Capacitance @ Frequency
Clamping Voltage
Current
ESD Rating (Typical @ IEC 61000-4-2 (Air)
ESD Rating (Typical @ IEC 61000-4-2 (Contact)
ESD Rating (Typical @ ISO 10605 (330 pF / 2 kΩ, Contact)
Holding Reverse Current
Holding Reverse Voltage
Lead Solder Temperature
Mounting Type
Operating Temperature
Package / Case
Peak Pulse Current
Power Line Protection
Reverse Leakage Current
Reverse Standoff Voltage
Storage Temperature
Supplier Device Package
Type
Unidirectional Channels
Voltage

ESD8351HT1G Description

Short technical summary and product information.

The ESD8351HT1G is a unidirectional TVS diode from On Semiconductor designed to protect high-speed data lines from electrostatic discharge (ESD). It features a reverse standoff voltage of 3.3 V and a minimum breakdown voltage of 5.5 V at 1 mA. The typical clamping voltage is 11.2 V at a peak pulse current of 5 A (8/20 µs waveform).

 

With an ultra-low typical capacitance of 0.37 pF (maximum 0.55 pF at 1 MHz), this device is ideal for preserving signal integrity in high-speed interfaces such as USB 2.0 and eSATA. It provides ESD protection up to ±15 kV contact and air per IEC 61000-4-2, and ±30 kV per ISO 10605.

 

The device is housed in a surface-mount SOD-323 package (SC-76) and operates over a junction temperature range of -55°C to 125°C. It is RoHS compliant, halogen-free, and BFR-free. The SZ prefix variant is AEC-Q101 qualified for automotive applications.

ESD8351HT1G Quick Information

Product Type: TVS Diode
Series: ESD8351
Canonical Name: ESD8351HT1G TVS Diode, 3.3V Reverse Standoff, SOD-323
Subcategory: ESD Protection Diodes

ESD8351HT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

ESD8351HT1G Features

  • Ultra-low capacitance of 0.37 pF typical.
  • ESD protection up to ±15 kV contact.
  • Peak pulse current rating of 5 A.
  • Surface mount SOD-323 package.
  • RoHS compliant and halogen free.

ESD8351HT1G Applications

  • Protects USB 2.0 high-speed data lines.
  • Suitable for eSATA interfaces.
  • Ideal for portable electronics ESD protection.
  • Used in automotive applications (SZ prefix).

ESD8351HT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the reverse standoff voltage?

3.3 V.

What is the breakdown voltage?

5.5 V minimum, 7.0 V typical, 7.8 V maximum at 1 mA.

What is the clamping voltage?

11.2 V typical at 5 A peak pulse current (8/20 µs).

What is the peak pulse current rating?

5 A maximum (8/20 µs).

What package is this device available in?

SOD-323 (SC-76).

What is the capacitance?

0.37 pF typical, 0.55 pF maximum at 1 MHz (I/O to GND).

What ESD ratings does it meet?

IEC 61000-4-2 contact and air ±15 kV, ISO 10605 ±30 kV.

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