| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
201,000 pcs
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201000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Halogen Free | |
| Package / Case | |
| Tape & Reel |
The ESD8116MUTAG from On Semiconductor is a low capacitance ESD protection diode array specifically designed to protect high speed data lines such as USB 3.0/3.1 interfaces. It offers ultra-low capacitance of 0.35 pF maximum (I/O to GND) to minimize signal degradation. The device provides robust ESD protection per IEC 61000-4-2 with ±15 kV contact and air discharge ratings.
Engineered for voltage sensitive applications, the ESD8116MUTAG features a low ESD clamping voltage (not numerically specified in the extract) and a breakdown voltage of 4.0 V minimum (5.0 V typical). The reverse working voltage is 3.3 V, and reverse leakage current is limited to 1.0 µA. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
The flow-through style UDFN8 package allows for easy PCB layout and matched trace lengths to maintain consistent impedance between high speed differential lines. The operating junction temperature range is -55 to +125 °C, with a storage temperature range of -55 to +150 °C. It is supplied in tape and reel packaging with a standard quantity of 3000 pieces.
The reverse working voltage is 3.3 V maximum (I/O Pin to GND).
The minimum breakdown voltage is 4.0 V, with a typical value of 5.0 V (at IT = 1 mA, I/O Pin to GND).
The maximum capacitance is 0.35 pF (I/O to GND).
The device provides ±15 kV contact discharge and ±15 kV air discharge per IEC 61000-4-2.
The operating junction temperature range is -55 to +125 °C.
The device is available in a UDFN8 package.
Yes, the device is RoHS3 compliant and Pb-Free.