| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
557,353 pcs
|
557353 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Applications | |
| Bidirectional Channels | |
| Breakdown Voltage | |
| Capacitance @ Frequency | |
| ESD Rating | |
| Halogen Free | |
| Junction Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature Range | |
| Package / Case | |
| Package / Case (Footprint) | |
| Power Dissipation | |
| Power Line Protection | |
| Reverse Leakage Current | |
| Reverse Standoff Voltage | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Tape & Reel | |
| Type | |
| Voltage | |
| clamping_voltage (Maximum @ IPP = 2 A, 8 x 20 µs) | |
| clamping_voltage (Minimum/Maximum @ IPP = 0.5 A, 8 x 20 µs) | |
| clamping_voltage (Minimum/Maximum @ IPP = 1.0 A, 8 x 20 µs) |
The ESD7501MUT5G from On Semiconductor is a micro-packaged ESD protection diode designed to protect voltage sensitive components from electrostatic discharge (ESD) and transient voltage events. It offers excellent clamping capability, low capacitance (0.45 pF typical), low leakage current (1.0 µA maximum at 5 V), and fast response time, making it ideal for high-frequency designs where board space is critical.
Key electrical specifications include a reverse standoff voltage of 5.0 V, a minimum breakdown voltage of 5.5 V at 1 mA, and clamping voltages ranging from 8.4 V to 11.5 V depending on peak pulse current. The device meets IEC 61000-4-2 Level 4 ESD protection with ±16 kV contact and air discharge ratings. It is also Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
The ESD7501MUT5G is housed in a compact X3DFN2 package (Case 152AF) with dimensions 0.60 mm x 0.30 mm and a body height of 0.3 mm, suitable for surface mount assembly. It is supplied in tape and reel packaging with a standard quantity of 15,000 pieces. Typical applications include USB 2.0/3.0, MHL 2.0, and eSATA interfaces, where low capacitance and high ESD robustness are required.
The reverse standoff voltage is 5.0 V.
The minimum breakdown voltage is 5.5 V at a test current of 1 mA.
Clamping voltage depends on peak pulse current: at 0.5 A (8x20 µs) it is 8.4 V min / 8.9 V max; at 1.0 A it is 9 V min / 9.5 V max; at 2.0 A it is 11.5 V max.
The device is packaged in a X3DFN2 (Case 152AF) surface mount package with dimensions 0.62 mm x 0.32 mm (0201 footprint).
The ESD7501MUT5G provides ±16 kV contact and ±16 kV air discharge protection per IEC 61000-4-2.
Typical junction capacitance is 0.45 pF, with a maximum of 0.75 pF at 0 V and 1 MHz.
Typical applications include USB 2.0/3.0, MHL 2.0, and eSATA interfaces, where low capacitance and high ESD protection are required.