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ESD7410MXWT5G The ESD7410MXWT5G is a Zener TVS diode from On Semiconductor providing ESD protection with a reverse standoff voltage of 10 V and ultra-low capacitance below 1.0 pF.
Mfr Part #:

ESD7410MXWT5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ESD7410MXWT5G is a Zener TVS diode from On Semiconductor providing ESD protection with a reverse standoff voltage of 10 V and ultra-low capacitance below 1.0 pF.
Total Stock: 208,000 pcs

ESD7410MXWT5G Available from 1 distributors

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ESD7410MXWT5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Applications
Bidirectional Channels
Breakdown Voltage
Capacitance (Maximum)
Capacitance @ Frequency
Current
ESD Air Voltage (IEC61000-4-2)
ESD Contact Voltage (IEC61000-4-2)
ESD Contact Voltage (ISO 10605, 150 pF/2 kΩ)
ESD Contact Voltage (ISO 10605, 330 pF/2 kΩ)
ESD Contact Voltage (ISO 10605, 330 pF/330 Ω)
HBM Voltage
Halogen Free
Mounting Type
Operating Temperature
Operating Temperature Range
Peak Pulse Current
Peak Pulse Power
Power Line Protection
Reverse Standoff Voltage
Standard Package Quantity
Supplier Device Package
Thermal Resistance Junction-to-Ambient
Total Power Dissipation
Type
Voltage
capacitance (Typical @ 1 GHz)
insertion_loss (Typical @ 1 GHz)
insertion_loss (Typical @ 3 GHz)

ESD7410MXWT5G Description

Short technical summary and product information.

The ESD7410MXWT5G is an ultra-low capacitance ESD protection diode designed by On Semiconductor to protect voltage sensitive components from electrostatic discharge and transient voltage events. It features a reverse standoff voltage of 10 V and a maximum breakdown voltage of 19.4 V. The device offers exceptional capacitance linearity over voltage, making it ideal for RF applications. With a typical capacitance of 0.35 pF at 1 GHz and a maximum of less than 1.0 pF, it maintains signal integrity in high-frequency circuits. Insertion loss is only 0.1 dB at 1 GHz and 0.3 dB at 3 GHz. The ESD7410MXWT5G provides robust ESD protection meeting IEC61000-4-2 Level 4 with ±30 kV contact and air discharge, and ISO 10605 standards. It is housed in a 2-XDFN surface mount package with wettable flanks (2-X2DFNW 1x0.6) for automated optical inspection. The device is RoHS3 compliant, Pb-Free, and Halogen Free.

ESD7410MXWT5G Quick Information

Product Type: ESD Protection Diode
Canonical Name: ESD7410MXWT5G Ultra-Low Capacitance ESD Protection Diode
Subcategory: Zener TVS

ESD7410MXWT5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

ESD7410MXWT5G Features

  • Ultra-low capacitance below 1.0 pF.
  • ±30 kV ESD protection IEC61000-4-2.
  • Low insertion loss 0.1 dB at 1 GHz.
  • Wettable flank package for AOI.
  • RoHS3, Pb-Free, Halogen Free compliant.

ESD7410MXWT5G Applications

  • RF signal ESD protection circuits.
  • Active antenna ESD protection.
  • Near field communications (NFC).
  • High-speed data line protection.

ESD7410MXWT5G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the reverse standoff voltage of the ESD7410MXWT5G?

The reverse standoff voltage (VRWM) is 10 V.

What is the breakdown voltage of this device?

The maximum breakdown voltage is 19.4 V.

What is the peak pulse current rating?

The typical peak pulse current is 5 A, with a maximum of 6.4 A under an 8/20 µs waveform.

What is the capacitance of the ESD7410MXWT5G?

Typical capacitance is 0.35 pF at 1 GHz, with a maximum of less than 1.0 pF.

What package does the ESD7410MXWT5G come in?

It is available in a 2-XDFN surface mount package (2-X2DFNW 1x0.6) with wettable flanks.

What ESD protection levels does this diode provide?

It provides ±30 kV contact and air discharge per IEC61000-4-2, and ±30 kV contact per ISO 10605 with various capacitor/resistor combinations.

Is the ESD7410MXWT5G RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free.

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