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ESD7371XV2T1G TVS diode with 5.3V reverse standoff voltage, ultra-low capacitance of 0.43 pF, and ±8 kV ESD protection. Surface mount in SOD-523 package.
Mfr Part #:

ESD7371XV2T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
TVS diode with 5.3V reverse standoff voltage, ultra-low capacitance of 0.43 pF, and ±8 kV ESD protection. Surface mount in SOD-523 package.
Total Stock: 380,905 pcs

ESD7371XV2T1G Available from 1 distributors

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380,905 pcs
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ESD7371XV2T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Applications
Capacitance (Maximum @ I/O to GND)
Capacitance @ Frequency
Dynamic Resistance
ESD Rating
ESD Withstand Voltage
Halogen Free
Leakage Current
Mounting Type
Operating Temperature
Package / Case
Power Dissipation
Power Line Protection
Reverse Standoff Voltage
Supplier Device Package
Technology
Type
Unidirectional Channels
Voltage
capacitance (Typical @ 1 MHz)

ESD7371XV2T1G Description

Short technical summary and product information.

The ESD7371XV2T1G is a unidirectional TVS diode from On Semiconductor designed for ESD protection of voltage sensitive components requiring ultra-low capacitance. It features a reverse standoff voltage of 5.3V and a typical capacitance of 0.43 pF at 1 MHz, with a maximum capacitance of 0.7 pF from I/O to GND. The device provides IEC 61000-4-2 ESD protection of ±8 kV contact and air discharge, with an ESD withstand voltage of 20 kV. Leakage current is less than 1 nA, and dynamic resistance is under 1 ohm. Power dissipation is rated at 300 mW at 25°C ambient temperature. The part is housed in a surface mount SOD-523 package and operates over a junction temperature range of -55°C to 150°C. It is RoHS3 compliant, Pb-Free, and Halogen Free. The ESD7371 series is suitable for RF antenna protection, RF switching, PA, and near field communications applications.

ESD7371XV2T1G Quick Information

Product Type: TVS Diode
Series: ESD7371 Series
Canonical Name: ESD7371XV2T1G TVS Diode
Subcategory: ESD Protection Diode

ESD7371XV2T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

ESD7371XV2T1G Features

  • Ultra-low capacitance of 0.43 pF typical.
  • ±8 kV ESD protection per IEC 61000-4-2.
  • Low leakage current less than 1 nA.
  • Surface mount SOD-523 package.
  • RoHS3 compliant and halogen free.

ESD7371XV2T1G Applications

  • RF signal ESD protection circuits.
  • Antenna line protection for wireless devices.
  • ESD protection for near field communications.
  • Protection for USB 2.0 and USB 3.0 ports.

ESD7371XV2T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the reverse standoff voltage of the ESD7371XV2T1G?

The maximum reverse standoff voltage is 5.3V.

What is the capacitance of this TVS diode?

Typical capacitance is 0.43 pF at 1 MHz, with a maximum of 0.7 pF from I/O to GND.

What ESD rating does the ESD7371XV2T1G have?

It provides ±8 kV contact and air discharge per IEC 61000-4-2, with an ESD withstand voltage of 20 kV.

What is the leakage current of this device?

Maximum leakage current is less than 1 nA.

What package is the ESD7371XV2T1G available in?

It is available in a surface mount SOD-523 package.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

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