| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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889,000 pcs
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889000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
324 pcs
|
324 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The ESD7351P2T5G is a unidirectional ESD protection diode from On Semiconductor's ESD7351 series. It is designed to protect voltage-sensitive components requiring ultra-low capacitance from electrostatic discharge (ESD) and transient voltage events. The device features a maximum standoff voltage of 3.3V and a minimum breakdown voltage of 5.0V at 1mA. With a typical capacitance of 0.43pF and maximum of 0.6pF, it is ideal for high-frequency signal lines such as RF antenna, USB 2.0, and near field communications.
Electrical characteristics include low clamping voltage: 8.0V typical at 1A peak pulse current and 10V typical at 3A. Dynamic resistance is 0.35Ω typical. The diode provides IEC 61000-4-2 Level 4 ESD protection with ±20kV contact and air discharge ratings. Response time is less than 1ns, and reverse leakage current is typically less than 1nA (maximum 50nA at 3.3V). Total power dissipation is 150mW on FR-5 board at 25°C.
The device is housed in a surface mount SOD-923 package and operates over a junction temperature range of -55°C to 150°C. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. The SZ-prefix variant (SZESD7351) is available for automotive applications requiring AEC-Q101 qualification and PPAP capability.
The maximum reverse working voltage (standoff voltage) is 3.3V.
The minimum breakdown voltage is 5.0V at 1mA test current.
Typical clamping voltage is 8.0V at 1A peak pulse current and 10V at 3A.
Typical capacitance is 0.43pF, maximum 0.6pF at 0V bias and 1MHz.
It meets IEC 61000-4-2 Level 4 with ±20kV contact and ±20kV air discharge.
The junction temperature range is -55°C to 150°C.
It is available in a surface mount SOD-923 package.