ESD5381MUT5G The ESD5381MUT5G is a unidirectional ESD protection diode from On Semiconductor, offering 3V reverse standoff voltage, 1A peak pulse current, and ultra-low 12pF capacitance. It is housed in a compact 2-X3DFN (0201) package.
Mfr Part #:

ESD5381MUT5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ESD5381MUT5G is a unidirectional ESD protection diode from On Semiconductor, offering 3V reverse standoff voltage, 1A peak pulse current, and ultra-low 12pF capacitance. It is housed in a compact 2-X3DFN (0201) package.
✓ Total Stock: 10,000 pcs

ESD5381MUT5G Available from 1 distributor

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10000 pcs On Request 1 On Request On Request On Request On Request On Request

ESD5381MUT5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Applications
Capacitance
Current
Diode Type
Halogen Free
Mounting Type
Operating Temperature
Operating Temperature Range
Package / Case
Power Dissipation
Power Line Protection
Response Time
Supplier Device Package
Tape & Reel
Termination Style
Type
Unidirectional Channels
Voltage

ESD5381MUT5G Description

Short technical summary and product information.

The ESD5381MUT5G is a micro-packaged ESD protection diode from On Semiconductor, designed to protect voltage sensitive components from electrostatic discharge. It features excellent clamping capability, low leakage current, and fast response time under 1 ns.

 

Key electrical specifications include a reverse standoff voltage of 3 V, a minimum breakdown voltage of 6.1 V at 1 mA, and a maximum clamping voltage of 13 V at 1 A (8/20 µs pulse). The device also provides IEC 61000-4-2 Level 4 ESD protection (8 kV contact) and IEC 61000-4-4 Level 4 EFT protection. Typical capacitance is 12 pF at 0 V.

 

With an ultra-small body outline of 0.6 mm x 0.3 mm x 0.3 mm and a low profile, this diode is ideal for space-constrained applications such as cellular phones, MP3 players, and digital cameras. It is surface mountable in a 2-X3DFN (0201) package and supports a maximum power dissipation of 300 mW on FR-5 board.

 

The device is Pb-free, Halogen-free, and RoHS compliant, with MSL Level 1 qualification (260°C reflow). Standard packaging is 10,000 units per tape and reel.

ESD5381MUT5G Quick Information

Product Type: ESD Protection Diode
Series: ESD5381
Canonical Name: TVS Diode (ESD Protection) 3V Reverse Standoff, 1A Peak Pulse Current, 2-X3DFN Package
Subcategory: Unidirectional TVS Diode

ESD5381MUT5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited, 260°C reflow)
REACH Status: REACH Unaffected
Lead Free: Pb-Free

ESD5381MUT5G Features

  • Low capacitance of 12 pF typical.
  • Fast response time under 1 ns.
  • IEC 61000-4-2 Level 4 ESD protection (8 kV contact).
  • Ultra-small 0201 (0.6x0.3mm) package.
  • Pb-free, Halogen-free, RoHS compliant.

ESD5381MUT5G Applications

  • Protects voltage sensitive components from ESD.
  • Suitable for cellular phones and MP3 players.
  • Used in digital cameras and portable electronics.
  • Ideal for board space constrained applications.

ESD5381MUT5G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the reverse standoff voltage of the ESD5381MUT5G?

The reverse standoff voltage (V_RWM) is 3 V.

What is the breakdown voltage range?

The minimum breakdown voltage (V_BR) is 6.1 V at 1 mA test current.

What is the clamping voltage performance?

The maximum clamping voltage is 13 V at 1 A peak pulse current (8/20 µs), and typical clamping voltage is 10.5 V under IEC 61000-4-2 contact discharge (8 kV).

What is the peak pulse current rating?

The peak pulse current (I_PP) is 1 A under 8/20 µs pulse waveform.

What package is the ESD5381MUT5G available in?

It is available in a 2-X3DFN (0201) surface mount package with body dimensions 0.6 mm x 0.3 mm x 0.3 mm.

What is the capacitance of this ESD protection diode?

Typical capacitance is 12 pF at 0 V reverse bias.

What is the leakage current at the working voltage?

Maximum leakage current (I_R) is 100 nA at V_RWM = 3 V.

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