| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Applications | |
| Bidirectional Channels | |
| Capacitance @ Frequency | |
| Current | |
| ESD Protection (IEC61000-4-2) | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Peak Pulse Current (I_PP) | |
| Power Line Protection | |
| Supplier Device Package | |
| Type | |
| Voltage | |
| Voltage - Clamping (V_C) @ I_PP | |
| Voltage - Reverse Standoff (V_RWM) |
The ESD112B102ELE6327XTMA1 is a bi-directional TVS diode from Infineon Technologies, part of the ESD112-B1-02 series. It features a reverse standoff voltage of 5.3V and a clamping voltage of 21V at a peak pulse current of 3A (8/20µs).
This device offers ultra-low capacitance of 0.23pF at 1MHz, making it suitable for high-speed data lines and RF antenna applications. It provides ESD protection up to ±20kV (air and contact) per IEC61000-4-2.
The diode is housed in a surface-mount 0402 (1006 Metric) package with supplier device package PG-TSLP-2-20. It operates over a temperature range of -55°C to 125°C and is RoHS3 compliant.
The reverse standoff voltage (V_RWM) is 5.3V.
The clamping voltage is 21V at rated peak pulse current.
The peak pulse current (I_PP) is 3A under 8/20µs test condition.
The capacitance is 0.23pF at 1MHz.
It comes in a surface mount 0402 (1006 Metric) package with supplier device package PG-TSLP-2-20.
Yes, it is RoHS3 compliant and REACH unaffected.