| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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34 pcs
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34 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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| Tape & Reel |
The Infineon ESD112-B1-02ELS is a bidirectional ESD protection diode specifically designed for protecting RF interfaces, particularly in active antennas. It features a very low capacitance, as low as 0.2 pF, making it suitable for high-frequency applications without significantly impacting signal integrity.
This diode can handle voltages of up to ±5.3 V, providing robust protection against electrostatic discharge events. It is available in compact packages such as TSSLP-2-4 (0.62 mm x 0.32 mm x 0.31 mm) and TSLP-2-20 (1.0 mm x 0.6 mm x 0.39 mm), enabling integration into space-constrained designs.
The application note mentions its suitability for RF antenna protection, alongside the ESD0P4RFL, which exhibits a noise figure as low as 0.1 dB at 3 GHz. While the ESD0P4RFL uses a TSLP-4-7 package, the ESD112-B1 is optimized for smaller form factors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The capacitance is as low as 0.2 pF for the TSSLP-2-4 package and ≤0.4 pF for RF antenna protection applications.
The maximum voltage is ±5.3 V.
The noise figure is as low as 0.1 dB at 3 GHz.
Available packages include TSSLP-2-4 (0.62 mm x 0.32 mm x 0.31 mm), TSLP-2-20 (1.0 mm x 0.6 mm x 0.39 mm), and TSLP-4-7 (1.2 mm x 0.8 mm x 0.39 mm).
It is designed for RF interfaces for active antennas and RF antenna protection.