| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
540 pcs
|
540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Reverse Current | |
| Storage Temperature | |
| Thermal Resistance |
The ESAD83-004 from Fujitsu Semiconductor is a Schottky Barrier Diode designed for high-speed power switching applications. It features a low forward voltage drop of 0.55V at 12.5A and a maximum repetitive peak reverse voltage of 40V. The diode can handle an average output current of up to 30A and a surge current of 250A for 10ms.
With a junction-to-case thermal resistance of 1.2°C/W, the ESAD83-004 is suitable for applications requiring efficient heat dissipation. The operating and storage temperature range is -40°C to +150°C. This component is housed in an SC-65 package, facilitating surface-mount assembly.
Key electrical characteristics include a maximum reverse current of 20mA at VRRM. The planar design ensures high reliability for demanding power switching tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The ESAD83-004 has a maximum repetitive peak reverse voltage of 40V and a non-repetitive peak reverse voltage of 48V.
The ESAD83-004 has an average output current rating of 30A.
The maximum forward voltage drop for the ESAD83-004 is 0.55V when the forward current is 12.5A.
The operating junction temperature range for the ESAD83-004 is -40°C to +150°C.
The ESAD83-004 is supplied in an SC-65 package.