| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,000 pcs
|
8000 pcs | On Request | 1 | On Request | On Request | 1439+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ES6U2T2R is a N-Channel MOSFET from ROHM Semiconductor, designed for low voltage applications. It features a drain-source breakdown voltage of 20V and a continuous drain current of 1.5A. The device utilizes Metal Oxide semiconductor technology and includes an isolated Schottky diode for improved switching performance.
The MOSFET offers a low on-resistance of 180mOhm maximum at 4.5V gate drive and 1.5A drain current. Gate threshold voltage is 1V maximum at 1mA drain current. The device has a maximum gate charge of 1.8nC at 4.5V and input capacitance of 110pF at 10V, enabling efficient switching in power management circuits.
The ES6U2T2R is packaged in a 6-SMD with flat leads, supplier device package 6-WEMT, and is surface mountable. It can operate at junction temperatures up to 150°C and has a maximum power dissipation of 700mW at ambient temperature. The drive voltage range is 1.5V to 4.5V for optimal Rds(on).
| Qty | Low | High |
|---|---|---|
| 8,000+ | $0.10 | $0.10 |
| 16,000+ | $0.09 | $0.09 |
| 24,000+ | $0.08 | $0.08 |
| 40,000+ | $0.08 | $0.08 |
| 56,000+ | $0.08 | $0.08 |
| 80,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 20V.
The continuous drain current (Id) is 1.5A at Ta.
The maximum on-resistance is 180mOhm at Id=1.5A and Vgs=4.5V.
The maximum gate threshold voltage (Vgs(th)) is 1V at Id=1mA.
It is available in a 6-SMD with flat leads, supplier device package 6-WEMT, and is surface mount.
The maximum junction temperature is 150°C.
The part is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.