| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,085 pcs
|
1085 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Current | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage |
The ES1BHE3_A/H is a standard recovery rectifier diode designed for general purpose applications. It has a maximum repetitive peak reverse voltage of 100V and an average rectified current of 1A. The diode exhibits a typical forward voltage of 920mV at 1A and a fast reverse recovery time of 25ns, making it suitable for high-frequency switching circuits. The junction capacitance is 10pF at 4V and 1MHz. It operates over a temperature range of -55°C to 150°C.
The device is surface mounted in a DO-214AC (SMA) package, which is compact and suitable for automated assembly. The technology is standard silicon, with a speed classification of fast recovery (≤500ns, >200mA). This diode is commonly used in power supplies, freewheeling diodes, and polarity protection circuits. Its fast recovery time reduces switching losses in high-frequency converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.65 | $0.65 |
| 10+ | $0.40 | $0.40 |
| 50+ | $0.29 | $0.29 |
| 100+ | $0.26 | $0.26 |
| 500+ | $0.19 | $0.19 |
| 1,800+ | $0.16 | $0.16 |
| 5,400+ | $0.14 | $0.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage is 100V.
The average rectified current is 1A.
The typical forward voltage is 920mV at 1A.
The typical reverse recovery time is 25ns.
It is available in a DO-214AC (SMA) surface mount package.
The operating temperature range is -55°C to 150°C.
The typical junction capacitance is 10pF at 4V and 1MHz.