EPC2212 EPC2212 is a 100V, 18A N-Channel GaNFET power transistor in die form with solder bars. It features ultra-low on-resistance of 13.5mΩ and gate charge of 4nC.
Mfr Part #:

EPC2212

Available from 1 distributors
Mfr Name: EPC
EPC
EPC2212 is a 100V, 18A N-Channel GaNFET power transistor in die form with solder bars. It features ultra-low on-resistance of 13.5mΩ and gate charge of 4nC.
Total Stock: 53 pcs
$ Price Range: $1.33 - $4.21

EPC2212 Available from 1 distributor

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EPC2212 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

EPC2212 Description

Short technical summary and product information.

The EPC2212 is an enhancement mode Gallium Nitride FET (GaNFET) from EPC, rated for a maximum drain-source voltage of 100V and continuous drain current of 18A at 25°C. It leverages GaN technology to achieve ultra-low on-resistance and gate charge, enabling high-efficiency power conversion.

 

Key electrical specifications include a maximum on-resistance of 13.5mΩ at Vgs=5V and Id=11A, a typical gate charge of 4nC, and input capacitance of 407pF. The device operates over a junction temperature range of -55°C to 150°C and features a gate threshold voltage of 0.7V to 2.5V.

 

The EPC2212 is supplied as a passivated die with solder bars for surface mount assembly. The die measures 2.1 x 1.6 mm. Thermal resistance is 2°C/W junction-to-case and 69°C/W junction-to-ambient (on 1 sq in copper pad).

 

Typical applications include high-frequency DC-DC converters, LiDAR pulsed power systems, class-D audio amplifiers, and high-intensity headlamps. The device is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).

EPC2212 Quick Information

Product Type: GaNFET Power Transistor
Canonical Name: EPC2212 eGaN FET, N-Channel, 100V, 18A, Die
Subcategory: N-Channel Power Transistor

EPC2212 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

EPC2212 Estimated Pricing

Qty Low High
1+ $4.21 $4.21
10+ $2.76 $2.76
50+ $2.14 $2.14
100+ $1.94 $1.94
500+ $1.62 $1.62
2,500+ $1.35 $1.35
7,500+ $1.33 $1.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

EPC2212 Features

  • N-channel GaNFET with 100V drain-source rating.
  • Continuous drain current of 18A at 25°C.
  • Ultra-low on-resistance of 13.5mΩ maximum.
  • Low gate charge of 4nC for fast switching.
  • Passivated die package with solder bars.

EPC2212 Applications

  • Ideal for high-frequency DC-DC converters.
  • Used in LiDAR pulsed power applications.
  • Suitable for class-D audio amplifiers.
  • Designed for high intensity headlamps.

EPC2212 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the EPC2212?

The maximum drain-source voltage is 100V.

What is the continuous drain current rating?

The continuous drain current is 18A at 25°C.

What package type does the EPC2212 use?

It is supplied as a passivated die with solder bars for surface mount.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

Is the EPC2212 RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified.

What is the gate threshold voltage?

The gate threshold voltage is 0.7V typical, 1.0V typical, and 2.5V maximum at Id=3mA.

What is the on-resistance of the EPC2212?

The drain-source on-resistance is 10mΩ typical and 13.5mΩ maximum at Vgs=5V and Id=11A.

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