| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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44 pcs
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44 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The EPC2104 is an enhancement-mode Gallium Nitride (GaN) power transistor designed for high-performance applications. With a Drain-to-Source Voltage (VDS) of 100V and a low On-Resistance (RDS(on)) of 6.8 mΩ, this device is capable of handling continuous drain currents up to 30A and pulsed currents up to 180A.
Gallium Nitride technology enables exceptionally low on-resistance and high electron mobility, resulting in ultra-high efficiency and high frequency operation. The EPC2104 is particularly beneficial for applications where very high switching frequencies and low on-time are critical, as well as scenarios where on-state losses dominate.
Key benefits include lower switching losses, reduced parasitic inductance, and lower drive power, contributing to a higher power density footprint. The device is supplied in a passivated die form with solder bumps, measuring 6.05 mm x 2.3 mm.
Applications for the EPC2104 include high frequency DC-DC converters, BLDC motor drives, and synchronous rectification for AC-DC and DC-DC power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain-source voltage is 100V, and the maximum pulsed (up to 10,000 5 ms pulses at 150°C) is 120V.
The continuous drain current is 30A at TA = 25°C with RθJA = 10°C/W.
The typical drain-source on-resistance is 6.8mΩ at VGS = 5V and ID = 20A.
The operating junction temperature range is -40°C to 150°C.
The gate threshold voltage ranges from 0.8V to 2.5V at VDS = VGS and ID = 6mA.
The input capacitance ranges from 730pF to 880pF at VDS = 50V and VGS = 0V.
The die size is 6.05mm x 2.3mm.