| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The EPC2036 is an enhancement mode power transistor built with Gallium Nitride (GaN) technology, offering ultra-high efficiency and high switching frequency capability. This N-Channel device is rated for a continuous drain-to-source voltage of 100V and can handle pulsed voltages up to 120V. With a maximum continuous drain current of 1.7A at 25°C and a pulsed current capability of 18A, it is suitable for demanding power conversion tasks.
The device features a typical on-resistance of 62 mΩ and a maximum of 73 mΩ at Vgs=5V, enabling low conduction losses. Its gate threshold voltage ranges from 0.8V to 2.5V, and the recommended drive voltage is 5V. The EPC2036 has very low input capacitance (90 pF) and gate charge (0.91 nC), making it ideal for high-frequency switching applications.
Packaged as a passivated die with solder bumps, the EPC2036 measures 0.9 x 0.9 mm, enabling a very small footprint. It operates over a junction temperature range of -40°C to 150°C. Thermal resistance is 6°C/W junction-to-case, 49°C/W junction-to-board, and 100°C/W junction-to-ambient (on 1 sq in copper pad).
Typical applications include high-speed DC-DC conversion, wireless power transfer, high-frequency hard-switching and soft-switching circuits, LiDAR/pulsed power, and Class-D audio amplifiers.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.10 | $2.10 |
| 10+ | $1.34 | $1.34 |
| 50+ | $1.01 | $1.01 |
| 100+ | $0.90 | $0.90 |
| 500+ | $0.72 | $0.72 |
| 2,500+ | $0.59 | $0.59 |
| 7,500+ | $0.53 | $0.53 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain-to-source voltage is 100V. It can withstand up to 120V under pulsed conditions (5 ms pulses at 150°C).
The maximum continuous drain current is 1.7A at 25°C ambient temperature with RθJA of 340°C/W.
The typical on-resistance is 62 mΩ and the maximum is 73 mΩ at Vgs=5V and Id=1A.
The EPC2036 is supplied as a passivated die with solder bumps, surface mount. The die size is 0.9 x 0.9 mm.
The junction operating temperature range is -40°C to 150°C.
The gate threshold voltage (Vgs(th)) is 0.8V typical, 1.4V typical, and 2.5V maximum at Vds=Vgs and Id=0.6 mA.
The maximum gate charge (Qg) is 0.91 nC at Vgs=5V.