EPC2025 EPC2025 is a 300V N-Channel GaNFET rated for 4A continuous drain current, featuring 150mOhm on-resistance and 194pF input capacitance, in a surface mount die package.
Mfr Part #:

EPC2025

Available from 1 distributors
Mfr Name: EPC
EPC
EPC2025 is a 300V N-Channel GaNFET rated for 4A continuous drain current, featuring 150mOhm on-resistance and 194pF input capacitance, in a surface mount die package.
Total Stock: 760 pcs
$ Price Range: $2.36

EPC2025 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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760 pcs
760 pcs On Request 1 On Request On Request On Request On Request On Request

EPC2025 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

EPC2025 Description

Short technical summary and product information.

The EPC2025 is a 300V N-Channel Gallium Nitride FET (GaNFET) from EPC. It is designed for high-efficiency power conversion applications requiring fast switching and low on-resistance. The device is rated for 4A continuous drain current (at 25°C ambient) and achieves a maximum on-resistance of 150mOhm at 3A drain current and 5V gate drive.

 

Key electrical characteristics include a gate threshold voltage of 2.5V maximum at 1mA drain current, and an input capacitance of 194pF at 240V drain-source voltage. The device operates over a junction temperature range of -40°C to 150°C. The gate-source voltage is limited to +6V and -4V.

 

Packaged as a bare die, the EPC2025 is intended for surface mount assembly using standard die attach and wire bonding processes. The die form factor enables minimal parasitic inductance and compact power stage designs, making it suitable for high-frequency DC-DC converters, inverters, and wireless power systems.

EPC2025 Quick Information

Product Type: GaNFET N-Channel Power Transistor
Canonical Name: EPC2025 - GaNFET N-Channel 300V, 4A Die
Subcategory: Single N-Channel FET

EPC2025 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

EPC2025 Estimated Pricing

Qty Low High
3,000+ $2.36 $2.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

EPC2025 Features

  • N-Channel GaNFET for high-efficiency switching.
  • 300V drain-source voltage rating.
  • 4A continuous drain current capability.
  • 150mOhm typical on-resistance at 5V drive.
  • Surface mount die package for compact designs.

EPC2025 Applications

  • High-frequency DC-DC power converters.
  • Inverters for AC-DC power supplies.
  • Wireless power transfer systems.
  • Class-D audio amplifiers.
  • Power factor correction circuits.

EPC2025 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the EPC2025?

The drain-source voltage rating is 300V.

What is the maximum continuous drain current?

The maximum continuous drain current is 4A at ambient temperature.

What is the on-resistance of the EPC2025?

The maximum on-resistance is 150mOhm at 3A drain current and 5V gate drive.

What is the operating temperature range?

The operating junction temperature range is -40°C to 150°C.

What is the package type of the EPC2025?

The package is a bare die, intended for surface mount assembly.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.5V at 1mA drain current.

Is the EPC2025 RoHS compliant?

The RoHS status is listed as RoHS3 compliant but this is unverified; treat as low confidence.

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