| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11 pcs
|
11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The EPC2014 is an enhancement mode Gallium Nitride (GaN) Field-Effect Transistor (FET) designed for high-speed DC-DC conversion and other pulsed current applications. It offers a maximum drain-source voltage (Vds) of 40V and a typical on-resistance (Rds(on)) of 16mΩ. The continuous drain current (Id) is rated at 10A.
This device features a chip-scale package with dimensions of 1.7 mm x 1.1 mm, enabling higher power density. Its design benefits include higher switching frequencies, leading to lower switching losses, and higher efficiency due to lower conduction losses and zero reverse recovery losses.
The EPC2014 is RoHS 3 compliant and Halogen Free. It is noted as obsolete, with a recommendation to use the EPC2014C for new designs. This part is suitable for applications requiring high-frequency switching and efficient power conversion.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the EPC2014 is 40V.
The typical on-resistance (Rds(on)) for the EPC2014 is 16mΩ.
The continuous drain current (Id) for the EPC2014 is 10A.
The die size of the EPC2014 is 1.7 mm x 1.1 mm.
The EPC2014 is supplied in a chip-scale package.
The EPC2014 is RoHS 3 compliant.
Yes, the EPC2014 is Halogen Free.