| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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182 pcs
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182 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The EPC2014 is an enhancement mode Gallium Nitride (GaN) power transistor designed for high efficiency power conversion. It is rated for a drain-to-source voltage of 40V (48V pulsed) and a continuous drain current of 10A (40A pulsed). The device features a typical on-resistance of 12 mΩ and maximum of 16 mΩ at Vgs=5V, Id=5A. Its low gate charge of 2.8 nC enables high-frequency switching. The EPC2014 is supplied in a passivated die form with solder bumps for surface mount assembly. It operates over a junction temperature range of -40°C to 150°C. Typical applications include high-speed DC-DC conversion, class D audio, and hard-switched circuits.
The maximum continuous drain-to-source voltage is 40V, with a pulsed rating of 48V (up to 10,000 5ms pulses at 125°C).
The EPC2014 is supplied in a passivated die form with solder bumps for surface mount assembly.
The junction operating temperature range is -40°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and has low confidence.
The maximum total gate charge is 2.8 nC at Vgs=5V.
The maximum on-resistance is 16 mΩ at Vgs=5V, Id=5A; typical is 12 mΩ.
Continuous drain current is 10A at 25°C; pulsed drain current is 40A at 25°C with 300 µs pulse width.