| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Storage Temperature |
The EPC2010C is an enhancement mode Gallium Nitride (GaN) Field-Effect Transistor (FET) from EPC, designed for high-performance power conversion applications. It boasts a maximum drain-to-source voltage of 200V and a continuous drain current of 22A, with a pulsed current capability of 90A.
Key electrical characteristics include an ultra-low on-resistance (RDS(on)) of 25 mΩ at typical conditions (VGS = 5V, ID = 12A) and a gate threshold voltage (VGS(TH)) ranging from 0.8V to 2.5V. The device operates efficiently across a wide temperature range from -40°C to 150°C.
Gallium Nitride technology enables exceptional electron mobility and low temperature coefficients, resulting in very low RDS(on) and zero reverse recovery losses. This makes the EPC2010C suitable for applications demanding high switching frequencies and low on-state losses.
The EPC2010C is supplied in passivated die form with solder bars, measuring 3.6 mm x 1.6 mm. Its compact footprint and high efficiency make it ideal for applications such as high-speed DC-DC converters, Class D audio amplifiers, and Lidar systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain-to-source voltage is 200V.
The typical drain-source on-resistance is 18 mΩ at VGS = 5V and ID = 12A.
The continuous drain current is 22A at TA = 25°C.
The operating temperature range is -40°C to 150°C.
The EPC2010C is supplied in passivated die form with solder bars.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.