EMZ7T2R The EMZ7T2R is a surface-mount dual NPN/PNP bipolar transistor array from ROHM Semiconductor. It features 12V collector-emitter breakdown voltage, 500mA collector current, and 150mW power dissipation.
Mfr Part #:

EMZ7T2R

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The EMZ7T2R is a surface-mount dual NPN/PNP bipolar transistor array from ROHM Semiconductor. It features 12V collector-emitter breakdown voltage, 500mA collector current, and 150mW power dissipation.
✓ Total Stock: 2,000 pcs
$ Price Range: $0.16 - $0.89

EMZ7T2R Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request

EMZ7T2R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

EMZ7T2R Description

Short technical summary and product information.

The EMZ7T2R is a dual complementary NPN/PNP bipolar transistor array from ROHM Semiconductor, designed for surface-mount applications. It integrates both an NPN and a PNP transistor in a single package, enabling compact circuit designs. Key electrical characteristics include a maximum collector-emitter breakdown voltage of 12V, a maximum collector current of 500mA, and a typical transition frequency of 320MHz for the NPN section and 260MHz for the PNP section. The device offers a minimum DC current gain (hFE) of 270 at 10mA collector current and 2V collector-emitter voltage, and a maximum collector cutoff current of 100nA. Saturation voltage is 250mV max at 10mA base current and 200mA collector current. The junction operating temperature is rated up to 150°C. The EMZ7T2R is available in SOT-563 and SOT-666 package options, with a supplier device package of EMT6, making it suitable for high-density PCB layouts.

EMZ7T2R Quick Information

Product Type: Bipolar Transistor Array
Series: EMZ7
Canonical Name: EMZ7T2R Dual NPN/PNP Bipolar Transistor Array
Subcategory: Bipolar (BJT)

EMZ7T2R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

EMZ7T2R Estimated Pricing

Qty Low High
1+ $0.89 $0.89
10+ $0.55 $0.55
100+ $0.36 $0.36
500+ $0.27 $0.27
1,000+ $0.25 $0.25
2,000+ $0.22 $0.22
8,000+ $0.19 $0.19
16,000+ $0.18 $0.18
24,000+ $0.17 $0.17
40,000+ $0.16 $0.16
56,000+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

EMZ7T2R Features

  • Dual NPN/PNP complementary transistor array.
  • Maximum collector current of 500 mA.
  • Collector-emitter breakdown voltage of 12 V.
  • Transition frequency up to 320 MHz (NPN).
  • Surface-mount packaging (SOT-563, SOT-666).

EMZ7T2R Applications

  • Suitable for signal amplification and switching.
  • Ideal for portable and battery-powered devices.
  • Used in audio and RF preamplifier stages.

EMZ7T2R FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector current of the EMZ7T2R?

The maximum collector current (Ic) is 500 mA.

What is the collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (Vce) is 12 V.

What is the power dissipation rating?

The maximum power dissipation is 150 mW.

What package options are available?

The EMZ7T2R is available in SOT-563 and SOT-666 packages, with a supplier device package of EMT6.

What is the operating temperature range?

The maximum junction operating temperature is 150°C.

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