EMZ1T2R The EMZ1T2R is a surface-mount NPN/PNP complementary bipolar transistor array from ROHM Semiconductor. It features a 50V collector-emitter breakdown voltage and 150mA collector current in a compact EMT6 package.
Mfr Part #:

EMZ1T2R

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The EMZ1T2R is a surface-mount NPN/PNP complementary bipolar transistor array from ROHM Semiconductor. It features a 50V collector-emitter breakdown voltage and 150mA collector current in a compact EMT6 package.
✓ Total Stock: 256,000 pcs
$ Price Range: $0.09 - $0.56

EMZ1T2R Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
256,000 pcs
256000 pcs On Request 1 On Request On Request 0726+ On Request On Request

EMZ1T2R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

EMZ1T2R Description

Short technical summary and product information.

The EMZ1T2R from ROHM Semiconductor is a surface-mount NPN/PNP complementary bipolar transistor array designed for general-purpose switching and amplification. It integrates one NPN and one PNP transistor in a single compact package, saving board space and simplifying layout.

 

Key electrical specifications include a maximum collector-emitter breakdown voltage of 50V, a maximum collector current of 150mA, and a maximum power dissipation of 150mW. The NPN transistor offers a typical transition frequency of 180MHz, while the PNP transistor offers 140MHz. Minimum DC current gain (hFE) is 120 at 1mA collector current and 6V collector-emitter voltage.

 

The device is housed in a SOT-563 or SOT-666 package with an EMT6 supplier device package designation, suitable for surface-mount assembly. It is rated for operation up to a maximum junction temperature of 150°C.

EMZ1T2R Quick Information

Product Type: Bipolar Transistor Array
Series: EMZ1
Canonical Name: EMZ1T2R NPN/PNP Bipolar Transistor Array
Subcategory: NPN/PNP Complementary Pair

EMZ1T2R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

EMZ1T2R Estimated Pricing

Qty Low High
1+ $0.56 $0.56
10+ $0.35 $0.35
100+ $0.22 $0.22
500+ $0.17 $0.17
1,000+ $0.15 $0.15
2,000+ $0.13 $0.13
8,000+ $0.11 $0.11
16,000+ $0.10 $0.10
24,000+ $0.10 $0.10
40,000+ $0.09 $0.09
56,000+ $0.09 $0.09
80,000+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

EMZ1T2R Features

  • NPN/PNP complementary transistor pair.
  • 50V collector-emitter breakdown voltage.
  • 150mA maximum collector current.
  • 150mW maximum power dissipation.
  • Surface-mount EMT6 package.

EMZ1T2R Applications

  • General-purpose low-power switching.
  • Signal amplification circuits.
  • Portable and battery-powered devices.
  • Space-constrained PCB designs.

EMZ1T2R FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the EMZ1T2R?

The maximum collector-emitter breakdown voltage is 50V.

What is the maximum collector current for the EMZ1T2R?

The maximum collector current is 150mA.

What is the operating temperature range for the EMZ1T2R?

The maximum junction temperature is 150°C.

What package does the EMZ1T2R come in?

The EMZ1T2R is available in SOT-563 or SOT-666 packages, with a supplier device package of EMT6.

Is the EMZ1T2R RoHS compliant?

The EMZ1T2R is listed as RoHS3 compliant, though this is unverified.

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