| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
256,000 pcs
|
256000 pcs | On Request | 1 | On Request | On Request | 0726+ | On Request | On Request |
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The EMZ1T2R from ROHM Semiconductor is a surface-mount NPN/PNP complementary bipolar transistor array designed for general-purpose switching and amplification. It integrates one NPN and one PNP transistor in a single compact package, saving board space and simplifying layout.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 50V, a maximum collector current of 150mA, and a maximum power dissipation of 150mW. The NPN transistor offers a typical transition frequency of 180MHz, while the PNP transistor offers 140MHz. Minimum DC current gain (hFE) is 120 at 1mA collector current and 6V collector-emitter voltage.
The device is housed in a SOT-563 or SOT-666 package with an EMT6 supplier device package designation, suitable for surface-mount assembly. It is rated for operation up to a maximum junction temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.56 | $0.56 |
| 10+ | $0.35 | $0.35 |
| 100+ | $0.22 | $0.22 |
| 500+ | $0.17 | $0.17 |
| 1,000+ | $0.15 | $0.15 |
| 2,000+ | $0.13 | $0.13 |
| 8,000+ | $0.11 | $0.11 |
| 16,000+ | $0.10 | $0.10 |
| 24,000+ | $0.10 | $0.10 |
| 40,000+ | $0.09 | $0.09 |
| 56,000+ | $0.09 | $0.09 |
| 80,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 50V.
The maximum collector current is 150mA.
The maximum junction temperature is 150°C.
The EMZ1T2R is available in SOT-563 or SOT-666 packages, with a supplier device package of EMT6.
The EMZ1T2R is listed as RoHS3 compliant, though this is unverified.