EMX2DXV6T5G Dual NPN general purpose amplifier transistor from On Semiconductor. Features 50 V VCEO, 100 mA collector current, and 180 MHz transition frequency in a SOT-563 package.
Mfr Part #:

EMX2DXV6T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual NPN general purpose amplifier transistor from On Semiconductor. Features 50 V VCEO, 100 mA collector current, and 180 MHz transition frequency in a SOT-563 package.
✓ Total Stock: 16,000 pcs
$ Price Range: $0.04 - $0.08

EMX2DXV6T5G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
16,000 pcs
16000 pcs On Request 1 On Request On Request On Request On Request On Request

EMX2DXV6T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

EMX2DXV6T5G Description

Short technical summary and product information.

This dual NPN transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 package, which is optimized for low power surface mount designs where board space is at a premium.

 

The device features a collector-emitter breakdown voltage of 50 V minimum and a continuous collector current rating of 100 mA. DC current gain (hFE) is guaranteed at 120 minimum (at 1 mA, 6 V) with a typical range of 210–460. The collector-emitter saturation voltage is 400 mV maximum at 5 mA base current and 50 mA collector current. Transition frequency is 180 MHz typical at 12 V, 2 mA.

 

The EMX2DXV6T5G supports an operating junction temperature range of -55°C to 150°C. Power dissipation is 357 mW (one junction heated) and 540 mW (both junctions heated) at 25°C ambient. The part is lead-free and RoHS3 compliant per the manufacturer.

EMX2DXV6T5G Quick Information

Product Type: Bipolar Transistor Array
Series: EMX2DXV6T5
Canonical Name: Dual NPN General Purpose Amplifier Transistor
Subcategory: BJT Arrays

EMX2DXV6T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

EMX2DXV6T5G Estimated Pricing

Qty Low High
3,587+ $0.08 $0.08
16,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

EMX2DXV6T5G Features

  • Dual NPN transistors in one package.
  • Rated for 50 V collector-emitter breakdown.
  • DC current gain of 210-460 typical.
  • Surface mount SOT-563 packaging.
  • Lead-free and RoHS3 compliant.

EMX2DXV6T5G Applications

  • General purpose amplifier applications.
  • Low-power surface mount circuits.
  • Board space constrained designs.

EMX2DXV6T5G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the EMX2DXV6T5G?

-55°C to 150°C (junction temperature).

What is the package type for the EMX2DXV6T5G?

SOT-563 surface mount package.

Is the EMX2DXV6T5G RoHS compliant?

Yes, it is RoHS3 compliant per the manufacturer, though unverified.

What is the DC current gain of the EMX2DXV6T5G?

Minimum 120 at 1 mA, 6 V; typical range 210–460.

What is the maximum collector current?

100 mA continuous.

What is the transition frequency?

180 MHz typical at Vce=12 V, Ic=2 mA.

What is the collector-emitter saturation voltage?

400 mV maximum at Ib=5 mA, Ic=50 mA.

Home

Categories