| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,000 pcs
|
18000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The EMT3T2R is a dual PNP (2 PNP) bipolar transistor array manufactured by ROHM Semiconductor. It is designed for general-purpose switching and amplification applications requiring matched pair performance in a compact surface-mount package.
Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 50V, collector-base cutoff current of 100nA, and a power dissipation rating of 150mW. The device offers a minimum DC current gain (hFE) of 120 at 1mA, 6V, with a maximum Vce saturation voltage of 500mV at 50mA, 5mA base current. Transition frequency is 140MHz, suitable for low-frequency to medium-frequency applications.
The EMT3T2R is housed in an SOT-563 or SOT-666 package with a supplier device package of EMT6. It features surface mount mounting and is rated for operation at a junction temperature of up to 150°C. The device is RoHS3 compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 8,000+ | $0.07 | $0.07 |
| 16,000+ | $0.07 | $0.07 |
| 24,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) is 50V.
It is available in SOT-563 or SOT-666 packages, with the supplier device package being EMT6.
The maximum operating junction temperature is 150°C.
Yes, it is listed as RoHS3 compliant (though unverified).
The minimum DC current gain is 120 at 1mA collector current and 6V collector-emitter voltage.
The power dissipation is 150mW.
The transition frequency (ft) is 140MHz.