EMT3T2R EMT3T2R is a dual PNP bipolar transistor array from ROHM Semiconductor, rated for 50V collector-emitter breakdown and 150mW power dissipation, in a surface-mount EMT6 package.
Mfr Part #:

EMT3T2R

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
EMT3T2R is a dual PNP bipolar transistor array from ROHM Semiconductor, rated for 50V collector-emitter breakdown and 150mW power dissipation, in a surface-mount EMT6 package.
✓ Total Stock: 18,000 pcs
$ Price Range: $0.06 - $0.07

EMT3T2R Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
18,000 pcs
18000 pcs On Request 1 On Request On Request 24+ On Request On Request

EMT3T2R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

EMT3T2R Description

Short technical summary and product information.

The EMT3T2R is a dual PNP (2 PNP) bipolar transistor array manufactured by ROHM Semiconductor. It is designed for general-purpose switching and amplification applications requiring matched pair performance in a compact surface-mount package.

 

Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 50V, collector-base cutoff current of 100nA, and a power dissipation rating of 150mW. The device offers a minimum DC current gain (hFE) of 120 at 1mA, 6V, with a maximum Vce saturation voltage of 500mV at 50mA, 5mA base current. Transition frequency is 140MHz, suitable for low-frequency to medium-frequency applications.

 

The EMT3T2R is housed in an SOT-563 or SOT-666 package with a supplier device package of EMT6. It features surface mount mounting and is rated for operation at a junction temperature of up to 150°C. The device is RoHS3 compliant and has an MSL of 1 (unlimited).

EMT3T2R Quick Information

Product Type: Bipolar Transistor Array
Series: EMT3
Canonical Name: EMT3T2R - 2 PNP (Dual) Bipolar Transistor Array, 50V Vceo, 150mW
Subcategory: PNP Dual Transistor

EMT3T2R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

EMT3T2R Estimated Pricing

Qty Low High
8,000+ $0.07 $0.07
16,000+ $0.07 $0.07
24,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

EMT3T2R Features

  • Dual PNP transistor array in a single package.
  • Rated for 50V collector-emitter breakdown voltage.
  • 150mW power dissipation capability.
  • Minimum DC current gain of 120 at 1mA, 6V.
  • Surface mount package, SOT-563/EMT6.

EMT3T2R Applications

  • General purpose switching and amplification circuits.
  • Matched pair transistor applications.
  • Low-power signal processing circuits.
  • Surface mount designs requiring compact footprint.

EMT3T2R FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the EMT3T2R?

The collector-emitter breakdown voltage (Vceo) is 50V.

What package is the EMT3T2R available in?

It is available in SOT-563 or SOT-666 packages, with the supplier device package being EMT6.

What is the operating temperature range of the EMT3T2R?

The maximum operating junction temperature is 150°C.

Is the EMT3T2R RoHS compliant?

Yes, it is listed as RoHS3 compliant (though unverified).

What is the DC current gain (hFE) of the EMT3T2R?

The minimum DC current gain is 120 at 1mA collector current and 6V collector-emitter voltage.

What is the power dissipation rating of the EMT3T2R?

The power dissipation is 150mW.

What is the transition frequency of the EMT3T2R?

The transition frequency (ft) is 140MHz.

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