| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,000 pcs
|
24000 pcs | On Request | 1 | On Request | On Request | 1907+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The EMH52T2R is a dual NPN pre-biased digital transistor array manufactured by ROHM Semiconductor. Each transistor includes built-in bias resistors, simplifying circuit design by reducing external component count. The device is rated for a maximum collector-emitter voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 150mW. It offers a typical transition frequency of 250MHz and a minimum DC current gain (hFE) of 80 at Ic=5mA, Vce=10V. The maximum Vce saturation voltage is 150mV at Ib=500µA, Ic=5mA. The base resistor value is 47kΩ. Housed in a compact SOT-563 surface-mount package (also known as EMT6), it is suitable for space-constrained applications requiring two switching or amplification channels.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.36 | $0.36 |
| 10+ | $0.22 | $0.22 |
| 100+ | $0.14 | $0.14 |
| 500+ | $0.10 | $0.10 |
| 1,000+ | $0.09 | $0.09 |
| 2,000+ | $0.08 | $0.08 |
| 8,000+ | $0.07 | $0.07 |
| 16,000+ | $0.06 | $0.06 |
| 24,000+ | $0.06 | $0.06 |
| 40,000+ | $0.05 | $0.05 |
| 56,000+ | $0.05 | $0.05 |
| 80,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 50V.
The maximum collector current (Ic) is 100mA.
It is available in a surface-mount SOT-563 package, also designated as EMT6.
The typical transition frequency (ft) is 250MHz.
The built-in base resistor is 47kΩ.