| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,000 pcs
|
8000 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The EMH11T2R is a dual NPN pre-biased transistor array manufactured by ROHM Semiconductor. It integrates two matched NPN transistors with built-in bias resistors (10 kOhm base resistor each) in a compact surface-mount package.
Each transistor features a collector-emitter voltage (Vceo) of 50 V and a collector current (Ic) rating of 100 mA. The device offers a DC current gain (hFE) minimum of 30 at Ic=5mA and Vce=5V, and a typical transition frequency of 250 MHz. The maximum saturation voltage (Vce sat) is 300 mV at Ib=500µA and Ic=10mA.
The EMH11T2R is housed in an EMT6 package (SOT-563 / SOT-666 footprint) and supports surface-mount assembly. Total power dissipation is 150 mW.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.56 | $0.56 |
| 10+ | $0.35 | $0.35 |
| 100+ | $0.22 | $0.22 |
| 500+ | $0.17 | $0.17 |
| 1,000+ | $0.15 | $0.15 |
| 2,000+ | $0.13 | $0.13 |
| 8,000+ | $0.11 | $0.11 |
| 16,000+ | $0.10 | $0.10 |
| 24,000+ | $0.10 | $0.10 |
| 40,000+ | $0.09 | $0.09 |
| 56,000+ | $0.09 | $0.09 |
| 80,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It is a dual NPN pre-biased (digital) transistor array.
The collector-emitter voltage (Vceo) is 50 V.
The collector current (Ic) rating is 100 mA.
The power dissipation (Pd) is 150 mW.
The device is available in EMT6 (SOT-563, SOT-666) surface mount package.
The base resistor is 10 kOhm.
RoHS3 compliant status is declared but unverified.