| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
510 pcs
|
510 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The EMG5T2R is a dual NPN pre-biased (digital) transistor from ROHM Semiconductor, integrating two NPN transistors with built-in bias resistors in a single surface-mount package. This device is designed for switching and amplification applications where space savings and component count reduction are critical.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 50V, a maximum collector current of 100mA, and a power dissipation rating of 150mW. The transistor offers a minimum DC current gain (hFE) of 68 at 5mA collector current and 5V collector-emitter voltage, with a typical transition frequency of 250MHz. The collector-emitter saturation voltage is a maximum of 300mV at a base current of 250µA and collector current of 5mA. The device includes a nominal 47kΩ base resistor (R1).
The EMG5T2R is housed in a compact 6-SMD (5 leads) flat lead package, designated as the EMT5 supplier device package, and is intended for surface mount assembly. This configuration is suitable for high-density PCB designs in consumer and industrial electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.54 | $0.54 |
| 10+ | $0.34 | $0.34 |
| 100+ | $0.21 | $0.21 |
| 500+ | $0.16 | $0.16 |
| 1,000+ | $0.14 | $0.14 |
| 2,000+ | $0.13 | $0.13 |
| 8,000+ | $0.11 | $0.11 |
| 16,000+ | $0.10 | $0.10 |
| 24,000+ | $0.09 | $0.09 |
| 40,000+ | $0.09 | $0.09 |
| 56,000+ | $0.09 | $0.09 |
| 80,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The EMG5T2R is housed in a 6-SMD (5 Leads), Flat Lead package, also known as the EMT5 supplier device package.
The EMG5T2R is listed as RoHS3 Compliant, though this status is unverified.
The maximum power dissipation is 150 mW.
The maximum collector-emitter breakdown voltage is 50 V.
The typical transition frequency is 250 MHz.