| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
34,865 pcs
|
34865 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The EMG2DXV5T5G is a dual NPN Bias Resistor Transistor (BRT) from On Semiconductor, integrating two transistors with monolithic bias resistor networks in a single SOT-553 package. Each transistor includes a 47 kΩ series base resistor (R1) and a 47 kΩ base-emitter resistor (R2), eliminating external bias components and reducing board space.
Key electrical specifications include a minimum collector-emitter voltage (VCEO) of 50 V, a collector current rating of 100 mA, and a minimum DC current gain (hFE) of 80 at 5 mA, 10 V. The collector-emitter saturation voltage is 250 mV maximum at 10 mA. Power dissipation is 230 mW on FR-4 with minimum pad, with a junction-to-ambient thermal resistance of 540 °C/W.
The device is housed in a surface-mount SOT-553 package, suitable for low-power applications. It is RoHS3 compliant, Pb-Free, and Halogen Free, with Moisture Sensitivity Level 1. Available in tape and reel packaging for automated assembly.
| Qty | Low | High |
|---|---|---|
| 16,000+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 50V minimum.
SOT-553 surface mount package.
-55°C to +150°C junction and storage temperature.
Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free.
Both base series resistor (R1) and base-emitter resistor (R2) are 47 kΩ.
100 mA.
230 mW on FR-4 with minimum pad.