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EMG2DXV5T5 Dual NPN pre-biased bias resistor transistor (BRT) rated at 50V VCEO and 100mA IC with integrated 47kΩ base and base-emitter resistors, housed in a SOT-553 surface mount package.
Mfr Part #:

EMG2DXV5T5

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual NPN pre-biased bias resistor transistor (BRT) rated at 50V VCEO and 100mA IC with integrated 47kΩ base and base-emitter resistors, housed in a SOT-553 surface mount package.
✓ Total Stock: 15,440 pcs

EMG2DXV5T5 Available from 1 distributor

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✓ Non-Authorised
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Smaxon Electronics ✓
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15,440 pcs
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15440 pcs On Request 1 On Request On Request 04+ On Request On Request
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EMG2DXV5T5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Operating Temperature Range
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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EMG2DXV5T5 Description

Short technical summary and product information.

The EMG2DXV5T5 from onsemi is a dual NPN silicon bias resistor transistor (BRT) that integrates two pre-biased transistors in a single SOT-553 package. Each transistor includes monolithic bias resistors — a 47kΩ series base resistor (R1) and a 47kΩ base-emitter resistor (R2) — eliminating external resistor components and simplifying board layout. This device is designed for low-power surface mount applications where board space and component count reduction are critical.

 

Electrical ratings include a collector-emitter voltage (VCEO) of 50V and a collector-base voltage (VCBO) of 50V, with a continuous collector current (IC) of 100mA. DC current gain (hFE) is a minimum of 80 at Ic=5mA, Vce=10V. Collector-emitter saturation voltage is a maximum of 250mV at Ib=300µA, Ic=10mA. The total device power dissipation is 230mW on a minimum pad FR-4 board, derating 1.8mW/°C above 25°C.

 

Packaged in a SOT-553 case with a surface mount mounting type, the device supports a wide operating temperature range of -55°C to +150°C. Thermal resistance junction-to-ambient is 540°C/W (minimum pad) and 370°C/W (1.0x1.0 inch pad). The device is Pb-free, halogen free/BFR free, RoHS compliant, and rated MSL 1 (unlimited).

EMG2DXV5T5 Quick Information

Product Type: Bias Resistor Transistor
Series: EMG2DXV5
Canonical Name: Dual NPN Pre-Biased Bias Resistor Transistor (BRT)
Subcategory: Pre-Biased Array

EMG2DXV5T5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Moisture Sensitivity Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Pb-Free

EMG2DXV5T5 Features

  • Integrated monolithic bias resistor network.
  • Rated for 50V collector-emitter voltage.
  • 100mA continuous collector current.
  • 230mW power dissipation in SOT-553.
  • RoHS compliant and MSL level 1.

EMG2DXV5T5 Applications

  • Simplifies circuit design and reduces board space.
  • Suitable for low-power switching applications.
  • Ideal for digital logic interface circuits.

EMG2DXV5T5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transistor type of the EMG2DXV5T5?

The EMG2DXV5T5 contains two NPN pre-biased (digital) transistors with monolithic bias resistor networks.

What is the maximum collector-emitter voltage (VCEO)?

The maximum collector-emitter voltage (VCEO) is 50V.

What is the maximum collector current?

The maximum collector current (IC) is 100mA.

What is the power dissipation of the EMG2DXV5T5?

Total device power dissipation is 230mW on FR-4 at minimum pad, derating 1.8mW/°C above 25°C, and 338mW on a 1.0x1.0 inch pad, derating 2.7mW/°C.

What package is the EMG2DXV5T5 available in?

The device is housed in a SOT-553 surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the EMG2DXV5T5 RoHS compliant?

Yes, the device is RoHS compliant, Pb-free, and halogen free/BFR free as stated in the datasheet.

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