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EMG1T2R Dual NPN pre-biased transistor array from ROHM Semiconductor. Features 50V collector-emitter breakdown voltage, 100mA collector current, and 150mW power dissipation.
Mfr Part #:

EMG1T2R

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
Dual NPN pre-biased transistor array from ROHM Semiconductor. Features 50V collector-emitter breakdown voltage, 100mA collector current, and 150mW power dissipation.
✓ Total Stock: 5,900 pcs
$ Price Range: $0.10 - $0.54

EMG1T2R Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
5,900 pcs
On Request
5900 pcs On Request 1 On Request On Request 19+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

EMG1T2R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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EMG1T2R Description

Short technical summary and product information.

The EMG1T2R is a dual NPN pre-biased transistor array from ROHM Semiconductor. Each transistor includes built-in bias resistors (R1 = 22kΩ) simplifying circuit design by reducing external component count. The device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 150mW. With a transition frequency of 250MHz, it is suitable for switching and amplification applications up to moderate frequencies. The transistors are housed in a compact EMT5 surface mount package (6-SMD, 5 leads, flat lead) making it ideal for space-constrained designs. The pre-biased configuration ensures consistent biasing and reduces manufacturing variability.

EMG1T2R Quick Information

Product Type: Pre-Biased Bipolar Transistor Array
Canonical Name: ROHM Semiconductor EMG1T2R Dual NPN Pre-Biased Transistor
Subcategory: Arrays, Pre-Biased

EMG1T2R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

EMG1T2R Estimated Pricing

Qty Low High
1+ $0.54 $0.54
10+ $0.34 $0.34
100+ $0.21 $0.21
500+ $0.16 $0.16
1,000+ $0.14 $0.14
2,000+ $0.13 $0.13
8,000+ $0.10 $0.10
16,000+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

EMG1T2R Features

  • Dual NPN pre-biased transistor array.
  • Built-in base resistor R1 = 22kΩ.
  • Rated for 50V collector-emitter voltage.
  • 100mA maximum collector current.
  • 250MHz transition frequency.

EMG1T2R Applications

  • Used in low-power switching circuits.
  • Suitable for signal amplification stages.
  • Ideal for space-constrained PCB designs.
  • Common in consumer electronics and IoT devices.

EMG1T2R FAQs

7 frequently asked questions generated from this part’s specifications.
What type of transistor is the EMG1T2R?

It is a dual NPN pre-biased transistor array.

What is the collector-emitter breakdown voltage?

50V minimum.

What is the maximum collector current?

100mA.

What is the power dissipation rating?

150mW maximum.

What is the package type?

6-SMD (5 leads), flat lead, supplier device package EMT5.

Is the EMG1T2R RoHS compliant?

Yes, it is RoHS3 compliant (unverified).

What is the transition frequency?

250MHz typical.

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