| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,400 pcs
|
4400 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The EMG11T2R from ROHM Semiconductor is a dual NPN pre-biased transistor array designed for surface mount applications. This component integrates two NPN transistors with built-in bias resistors, simplifying circuit design by reducing external component count.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 50V, a collector current (IC) rating of 100mA, and a power dissipation of 150mW. The device offers a DC current gain (hFE) of 80 minimum at 10mA collector current and 5V collector-emitter voltage, with a maximum collector-emitter saturation voltage of 300mV at 250µA base current and 5mA collector current. The transition frequency (fT) is 250MHz, suitable for switching and amplification circuits.
The EMG11T2R is housed in a compact 6-SMD (5 leads) flat lead package, designated as the EMT5 supplier device package. It is designed for surface mount assembly, making it suitable for space-constrained designs in consumer electronics, portable devices, and general-purpose signal processing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.54 | $0.54 |
| 10+ | $0.34 | $0.34 |
| 100+ | $0.21 | $0.21 |
| 500+ | $0.16 | $0.16 |
| 1,000+ | $0.14 | $0.14 |
| 2,000+ | $0.13 | $0.13 |
| 8,000+ | $0.11 | $0.11 |
| 16,000+ | $0.10 | $0.10 |
| 24,000+ | $0.09 | $0.09 |
| 40,000+ | $0.09 | $0.09 |
| 56,000+ | $0.09 | $0.09 |
| 80,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The EMG11T2R is a 2 NPN pre-biased (dual) transistor.
The collector-emitter breakdown voltage (VCEO) is 50V.
The maximum collector current (IC) is 100mA.
The power dissipation is 150mW.
The EMG11T2R is available in a 6-SMD (5 leads) flat lead package, also known as the EMT5 supplier device package.
The transition frequency (fT) is 250MHz.
The base resistor (R1) value is 47kΩ.