| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,290 pcs
|
2290 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
1,837 pcs
|
1837 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| SVHC Present |
The EMFA0P02J is a P-Channel Power MOSFET manufactured by Excelliance MOS. This component is housed in a compact SOT23-3 package, making it suitable for space-constrained applications.
Key electrical specifications include a Drain-Source Breakdown Voltage (V(BR)DSS) of -20V and a maximum Continuous Drain Current (ID(ON)) of -3.4A. The On-Resistance (Rds(on)) is specified at a maximum of 100mΩ at Vgs = 4.5V and 135mΩ at Vgs = 2.5V. Input capacitance (Ciss) is typically 382pF, and reverse transfer capacitance (Crss) is typically 60pF.
This MOSFET is designed for various power management applications. Its specifications suggest suitability for switching and amplification tasks where a P-Channel device is required. The SOT23-3 package is commonly used in surface-mount designs for consumer electronics, power tools, and battery management systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is -20V.
The maximum continuous drain current is -3.4A.
The maximum on-resistance is 100mΩ at Vgs=4.5V.
The EMFA0P02J is available in a SOT23-3 package.
The maximum gate threshold voltage is -1.2V.