| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,457 pcs
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1457 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The EMF60P02J is an N-Channel MOSFET manufactured by EMC, falling under the category of discrete semiconductor products. This component is designed for power switching and amplification applications. It offers a maximum drain-source voltage (Vds) of -20V and a maximum gate-source voltage (Vgs) of ±12V. The on-resistance (Rds(on)) is specified at 60mΩ maximum when Vgs is 4.5V, 96mΩ maximum at 2.5V, and 250mΩ maximum at 1.8V, indicating its performance characteristics under different gate drive conditions.
Key electrical parameters include a typical input capacitance (Ciss) of 382pF and a typical reverse transfer capacitance (Crss) of 60pF. The device has a maximum gate threshold voltage (Vgs(th)) of -1.2V and a maximum continuous drain current (Id(on)) of -4A. The EMF60P02J is supplied in a SOT23-3 package, which is a common surface-mount form factor suitable for automated assembly processes. Its specifications make it suitable for use in power supplies, battery management systems, and other general-purpose power electronics applications where a low-voltage N-channel MOSFET is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is -20V.
The maximum drain current (Id(on)) is -4A.
The maximum on-resistance (Rds(on)) at Vgs = 4.5V is 60mΩ.
The EMF60P02J is available in a SOT23-3 package.
The typical input capacitance (Ciss) is 382pF.