| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,275 pcs
|
2275 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The EMF23T2R is a dual digital transistor (BJT) array from ROHM Semiconductor, integrating one NPN pre-biased transistor and one PNP transistor in a compact surface-mount package. This configuration simplifies circuit design by reducing component count and board space.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 50V, collector current ratings of 100mA (NPN) and 150mA (PNP), and a total power dissipation of 150mW. The NPN transistor features a built-in base resistor of 10 kΩ, making it suitable for digital switching applications without external biasing resistors. DC current gain (hFE) is minimum 30 at 5mA/5V for the NPN and minimum 180 at 1mA/6V for the PNP. Transition frequencies are 250MHz (NPN) and 140MHz (PNP).
The device is housed in an EMT6 package (SOT-563/SOT-666 compatible) and is designed for surface mount assembly. It is RoHS3 compliant and has an MSL of 1 (unlimited). The part is suitable for general-purpose switching and amplification in low-power applications.
50V.
The EMF23T2R is available in an EMT6 surface-mount package, compatible with SOT-563 and SOT-666.
Yes, it is listed as RoHS3 compliant (unverified).
150mW.
100mA for the NPN transistor and 150mA for the PNP transistor.
10 kΩ.
Surface mount.