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EMF18XV6T5G EMF18XV6T5G is a pre-biased dual transistor combining an NPN and PNP in SOT-563. It has 50V/60V collector-emitter voltage, 100mA collector current, and 500mW power dissipation.
Mfr Part #:

EMF18XV6T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
EMF18XV6T5G is a pre-biased dual transistor combining an NPN and PNP in SOT-563. It has 50V/60V collector-emitter voltage, 100mA collector current, and 500mW power dissipation.
✓ Total Stock: 152,000 pcs
$ Price Range: $0.11

EMF18XV6T5G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
152,000 pcs
On Request
152000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

EMF18XV6T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature Range
Power
Resistor
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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EMF18XV6T5G Description

Short technical summary and product information.

EMF18XV6T5G is a pre-biased dual transistor that combines one NPN and one PNP transistor in a complementary pair. Internal bias resistors R1 (47 kΩ typical) and the R1/R2 ratio (1.0 typical) reduce external component count, making the device suitable for space-constrained switching circuits.

 

Electrical ratings include a 50 V collector-emitter voltage for the NPN transistor, 60 V for the PNP transistor, and a 100 mA continuous collector current for both. Total power dissipation is 500 mW when both junctions are heated, with 357 mW for a single junction. Lower saturation voltages and built-in resistors support small-signal switching and level shifting.

 

The device is housed in a Pb-free SOT-563 surface-mount package and operates over -55°C to +150°C. It is available in tape and reel packaging with 8,000 units per reel. These characteristics fit low-power portable electronics, load-driving circuits, and general-purpose small-signal amplifier stages.

EMF18XV6T5G Quick Information

Product Type: Dual NPN/PNP Pre-Biased Transistor
Series: EMF18
Canonical Name: Pre-Biased Dual NPN/PNP Transistor
Subcategory: Pre-Biased Transistor Array

EMF18XV6T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

EMF18XV6T5G Estimated Pricing

Qty Low High
8,000+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

EMF18XV6T5G Features

  • Pre-biased complementary NPN/PNP transistor pair.
  • SOT-563 surface-mount package, Pb-free.
  • NPN VCEO 50V, PNP VCEO 60V.
  • Rated for 100mA collector current.
  • Total power dissipation of 500mW.

EMF18XV6T5G Applications

  • Low-power switching for portable electronics.
  • Use in logic-level load driving circuits.
  • Suitable for voltage-level translator networks.
  • Ideal for small-signal amplifier stages.

EMF18XV6T5G FAQs

7 frequently asked questions generated from this part’s specifications.
What are the voltage ratings for the NPN and PNP transistors?

The NPN transistor has a 50V VCEO and the PNP transistor has a 60V VCEO.

What is the package type?

SOT-563 surface-mount package; tape and reel with 8,000 pieces per reel.

What temperature range is supported?

-55°C to +150°C junction and storage temperature range.

Is this component Pb-free / RoHS compliant?

The device is Pb-Free per the datasheet. RoHS3 compliance is listed in the product database, though not directly confirmed by the datasheet.

What is the collector current rating?

Maximum collector current is 100 mA for both NPN and PNP transistors.

What internal resistor values are available?

Input resistor R1 is 47 kΩ typical (range 32.9 to 61.1 kΩ), and R1/R2 ratio is 1.0 typical.

What is the power dissipation rating?

Total device dissipation is 500 mW with both junctions heated and 357 mW with one junction heated.

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