Mfr Part #:

EMD6T2R

Pre-biased dual NPN/PNP transistor array from ROHM Semiconductor. Features 150 mW power dissipation, 50 V collector-emitter voltage, and 100 mA collector current in a surface mount EMT6 package.

✓ Total Stock: 16,513 pcs

$ Price Range: $0.09 - $0.56

EMD6T2R Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	16,513 pcs On Request	16513 pcs	On Request	1	On Request	On Request	0624+	On Request	On Request

EMD6T2R Description

Short technical summary and product information.

The EMD6T2R is a pre-biased dual NPN/PNP transistor array manufactured by ROHM Semiconductor. It integrates one NPN and one PNP transistor with built-in bias resistors (R1 = 4.7 kΩ) in a single surface mount package, simplifying circuit design and reducing component count.

Key electrical specifications include a maximum collector-emitter voltage of 50 V, maximum collector current of 100 mA, and power dissipation of 150 mW. The device offers a minimum DC current gain (hFE) of 100 at 1 mA collector current and 5 V collector-emitter voltage, with a transition frequency of 250 MHz. Maximum Vce saturation is 300 mV at 250 µA base current and 5 mA collector current.

The EMD6T2R is housed in an EMT6 package (compatible with SOT-563 and SOT-666 footprints) and is designed for surface mount assembly. It is suitable for applications requiring matched NPN/PNP pairs with integrated biasing, such as signal switching, driver circuits, and inverter stages.

EMD6T2R Quick Information

Product Type: Pre-Biased Dual NPN/PNP Transistor Array

Canonical Name: EMD6T2R - Pre-Biased Dual NPN/PNP Transistor Array

Subcategory: Pre-Biased Transistor Array

EMD6T2R Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

EMD6T2R Estimated Pricing

Qty	Low	High
1+	$0.56	$0.56
10+	$0.35	$0.35
100+	$0.22	$0.22
500+	$0.17	$0.17
1,000+	$0.15	$0.15
2,000+	$0.13	$0.13
8,000+	$0.11	$0.11
16,000+	$0.10	$0.10
24,000+	$0.10	$0.10
40,000+	$0.09	$0.09
56,000+	$0.09	$0.09
80,000+	$0.09	$0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

EMD6T2R Features

Pre-biased dual NPN/PNP transistor array.
Surface mount EMT6 package (SOT-563/666).
Maximum 50 V collector-emitter voltage.
Maximum 100 mA collector current.
Built-in 4.7 kΩ base resistor.

EMD6T2R Applications

Used in signal switching and driver circuits.
Ideal for inverter and logic level shifting.
Suitable for low-power amplification stages.

EMD6T2R FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage?

50 V.

What is the package type?

EMT6 surface mount package, compatible with SOT-563 and SOT-666.

Is the EMD6T2R RoHS compliant?

Yes, it is listed as RoHS3 Compliant (unverified).

What is the power dissipation rating?

150 mW maximum.

What is the maximum collector current?

100 mA.

What is the base resistor value?

4.7 kΩ.

What is the minimum DC current gain?

100 at 1 mA collector current and 5 V collector-emitter voltage.

Category	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Name	ROHM Semiconductor
Current	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V
Frequency	250 MHz
Mounting Type	Surface Mount
Power	150 mW
Resistor	4.7 kΩ
Supplier Device Package	EMT6
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV @ 250µA, 5mA
Voltage	50 V