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EMD5DXV6T5G The EMD5DXV6T5G is a dual bias resistor transistor array containing one NPN and one PNP pre-biased transistor in a SOT-563 surface mount package.
Mfr Part #:

EMD5DXV6T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The EMD5DXV6T5G is a dual bias resistor transistor array containing one NPN and one PNP pre-biased transistor in a SOT-563 surface mount package.
✓ Total Stock: 7,985 pcs
$ Price Range: $0.06

EMD5DXV6T5G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
7,985 pcs
On Request
7985 pcs On Request 1 On Request On Request On Request On Request On Request
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EMD5DXV6T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Resistor
SVHC Present
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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EMD5DXV6T5G Description

Short technical summary and product information.

The EMD5DXV6T5G from onsemi is a dual Bias Resistor Transistor (BRT) array that integrates one NPN and one PNP pre-biased transistor in a single SOT-563 package. Each transistor includes a monolithic bias network with a 10 kΩ series base resistor (R1) and a 47 kΩ base-emitter resistor (R2), simplifying circuit design by eliminating external resistor components.

 

This device is rated for a collector-emitter breakdown voltage (VCEO) of 50 V and a maximum collector current (IC) of 100 mA. Total power dissipation is 500 mW when both junctions are heated, and 357 mW for a single junction. The transistors offer a minimum DC current gain (hFE) of 80 for the PNP transistor and 20 for the NPN transistor at 5 mA, 10 V.

 

The EMD5DXV6T5G is housed in a compact SOT-563 surface mount package, ideal for space-constrained low-power applications. It is supplied in tape and reel packaging with 8000 units per reel and is Pb-Free and RoHS compliant.

EMD5DXV6T5G Quick Information

Product Type: Pre-Biased Bipolar Transistor Array
Series: EMD5DXV6
Canonical Name: EMD5DXV6T5G Dual Bias Resistor Transistor Array
Subcategory: BJT Arrays

EMD5DXV6T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

EMD5DXV6T5G Estimated Pricing

Qty Low High
7,985+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

EMD5DXV6T5G Features

  • Dual NPN and PNP pre-biased transistors.
  • Built-in bias resistors simplify circuit design.
  • Rated for 50V collector-emitter breakdown voltage.
  • Surface mount SOT-563 package saves board space.
  • RoHS3 compliant and Pb-Free.

EMD5DXV6T5G Applications

  • Ideal for low-power switching applications.
  • Used in inverter and interface circuits.
  • Suitable for space-constrained portable devices.
  • Replaces discrete transistor and resistor pairs.

EMD5DXV6T5G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type for the EMD5DXV6T5G?

The EMD5DXV6T5G is available in a SOT-563 surface mount package.

What is the operating temperature range of this device?

The operating temperature range is -55°C to +150°C.

Is the EMD5DXV6T5G RoHS compliant?

Yes, the EMD5DXV6T5G is RoHS3 compliant and Pb-Free.

What are the collector-emitter and collector-base voltage ratings?

The collector-emitter breakdown voltage (VCEO) is 50V, and the collector-base voltage (VCBO) is also 50V.

What is the maximum collector current for each transistor?

The maximum collector current (IC) is 100 mA.

What are the built-in resistor values for the bias network?

The series base resistor (R1) is 10 kΩ and the base-emitter resistor (R2) is 47 kΩ.

What is the total power dissipation of the device?

Total power dissipation is 500 mW when both junctions are heated, and 357 mW when only one junction is heated.

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