| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,860 pcs
|
2860 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The EMD59T2R from ROHM Semiconductor is a dual pre-biased transistor array containing one NPN and one PNP transistor in a single surface mount package. Each transistor features built-in bias resistors (R1 = 47 kΩ) simplifying circuit design by reducing external component count. The device is rated for a maximum collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA, with a total power dissipation of 150mW.
With a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage, and a low saturation voltage of 150mV maximum at 500µA base current and 5mA collector current, this array is suitable for low-power switching and signal amplification applications. The transition frequency of 250MHz supports moderate-speed switching.
The EMD59T2R is housed in an EMT6 package (compatible with SOT-563 and SOT-666 footprints) and is designed for surface mount assembly. The compact footprint makes it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.41 | $0.41 |
| 10+ | $0.25 | $0.25 |
| 100+ | $0.16 | $0.16 |
| 500+ | $0.12 | $0.12 |
| 1,000+ | $0.10 | $0.10 |
| 2,000+ | $0.09 | $0.09 |
| 8,000+ | $0.08 | $0.08 |
| 16,000+ | $0.07 | $0.07 |
| 24,000+ | $0.07 | $0.07 |
| 40,000+ | $0.06 | $0.06 |
| 56,000+ | $0.06 | $0.06 |
| 80,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
100mA.
150mW.
EMT6 surface mount package, compatible with SOT-563 and SOT-666.
Yes, each transistor has a 47kΩ base resistor (R1).
80.
150mV.