EMD53T2R EMD53T2R is a pre-biased dual NPN/PNP transistor array from ROHM Semiconductor. It features a 50V collector-emitter breakdown voltage, 100mA collector current, and 150mW power dissipation in a surface-mount EMT6 package.
Mfr Part #:

EMD53T2R

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
EMD53T2R is a pre-biased dual NPN/PNP transistor array from ROHM Semiconductor. It features a 50V collector-emitter breakdown voltage, 100mA collector current, and 150mW power dissipation in a surface-mount EMT6 package.
✓ Total Stock: 40,000 pcs
$ Price Range: $0.06 - $0.41

EMD53T2R Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
40,000 pcs
40000 pcs On Request 1 On Request On Request 1903+ On Request On Request

EMD53T2R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

EMD53T2R Description

Short technical summary and product information.

The EMD53T2R from ROHM Semiconductor is a pre-biased dual transistor array containing one NPN and one PNP transistor with built-in bias resistors (R1 = 10kΩ). It is designed for low-power switching and amplification applications. Key electrical characteristics include a maximum collector current of 100mA, a collector-emitter breakdown voltage of 50V, and a maximum power dissipation of 150mW. The device offers a minimum DC current gain (hFE) of 35 at 5mA collector current and 10V Vce, with a saturation voltage (Vce sat) of 150mV at 500µA base current and 5mA collector current. The transition frequency is 250MHz.

 

This transistor array is housed in a compact surface-mount package, available in SOT-563 or SOT-666 case outlines, with the supplier device package designated as EMT6. The small footprint makes it suitable for space-constrained designs. The device is rated as RoHS3 compliant, has a moisture sensitivity level of 1 (unlimited), and is REACH unaffected.

 

Typical applications include signal switching, driver stages, and general-purpose amplification in portable electronics, consumer devices, and industrial control circuits. The integrated bias resistors simplify circuit design by reducing external component count.

EMD53T2R Quick Information

Product Type: Pre-Biased Bipolar Transistor Array
Canonical Name: EMD53T2R - Pre-Biased Dual NPN/PNP Transistor Array
Subcategory: Pre-Biased

EMD53T2R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

EMD53T2R Estimated Pricing

Qty Low High
1+ $0.41 $0.41
10+ $0.25 $0.25
100+ $0.16 $0.16
500+ $0.12 $0.12
1,000+ $0.10 $0.10
2,000+ $0.09 $0.09
8,000+ $0.08 $0.08
16,000+ $0.07 $0.07
24,000+ $0.07 $0.07
40,000+ $0.06 $0.06
56,000+ $0.06 $0.06
80,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

EMD53T2R Features

  • Pre-biased dual NPN/PNP transistor array.
  • Rated for 50V collector-emitter breakdown.
  • 100mA maximum collector current.
  • 150mW maximum power dissipation.
  • Surface-mount EMT6 package.

EMD53T2R Applications

  • Used in signal switching and amplification circuits.
  • Suitable for low-power driver applications.
  • Ideal for space-constrained designs.

EMD53T2R FAQs

6 frequently asked questions generated from this part’s specifications.
What is the package type of the EMD53T2R?

The EMD53T2R is available in SOT-563 or SOT-666 case outlines, with the supplier device package designated as EMT6.

Is the EMD53T2R RoHS compliant?

Yes, the EMD53T2R is marked as RoHS3 compliant.

What is the collector-emitter breakdown voltage of the EMD53T2R?

The maximum collector-emitter breakdown voltage is 50V.

What is the maximum collector current of the EMD53T2R?

The maximum collector current is 100mA.

What is the power dissipation of the EMD53T2R?

The maximum power dissipation is 150mW.

What is the transistor configuration of the EMD53T2R?

The device contains one NPN and one PNP transistor, both pre-biased.

Home
Account

Categories