| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,000 pcs
|
40000 pcs | On Request | 1 | On Request | On Request | 1903+ | On Request | On Request |
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| Resistor | |
| Supplier Device Package | |
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The EMD53T2R from ROHM Semiconductor is a pre-biased dual transistor array containing one NPN and one PNP transistor with built-in bias resistors (R1 = 10kΩ). It is designed for low-power switching and amplification applications. Key electrical characteristics include a maximum collector current of 100mA, a collector-emitter breakdown voltage of 50V, and a maximum power dissipation of 150mW. The device offers a minimum DC current gain (hFE) of 35 at 5mA collector current and 10V Vce, with a saturation voltage (Vce sat) of 150mV at 500µA base current and 5mA collector current. The transition frequency is 250MHz.
This transistor array is housed in a compact surface-mount package, available in SOT-563 or SOT-666 case outlines, with the supplier device package designated as EMT6. The small footprint makes it suitable for space-constrained designs. The device is rated as RoHS3 compliant, has a moisture sensitivity level of 1 (unlimited), and is REACH unaffected.
Typical applications include signal switching, driver stages, and general-purpose amplification in portable electronics, consumer devices, and industrial control circuits. The integrated bias resistors simplify circuit design by reducing external component count.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.41 | $0.41 |
| 10+ | $0.25 | $0.25 |
| 100+ | $0.16 | $0.16 |
| 500+ | $0.12 | $0.12 |
| 1,000+ | $0.10 | $0.10 |
| 2,000+ | $0.09 | $0.09 |
| 8,000+ | $0.08 | $0.08 |
| 16,000+ | $0.07 | $0.07 |
| 24,000+ | $0.07 | $0.07 |
| 40,000+ | $0.06 | $0.06 |
| 56,000+ | $0.06 | $0.06 |
| 80,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The EMD53T2R is available in SOT-563 or SOT-666 case outlines, with the supplier device package designated as EMT6.
Yes, the EMD53T2R is marked as RoHS3 compliant.
The maximum collector-emitter breakdown voltage is 50V.
The maximum collector current is 100mA.
The maximum power dissipation is 150mW.
The device contains one NPN and one PNP transistor, both pre-biased.