Mfr Part #:

EMD4DXV6T5G

The EMD4DXV6T5G is a dual pre-biased NPN/PNP transistor array from On Semiconductor. It features 50V collector-emitter voltage, 100mA collector current, and is housed in a surface mount SOT-563 package.

✓ Total Stock: 80,000 pcs

$ Price Range: $0.04

EMD4DXV6T5G Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	80,000 pcs On Request	80000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

EMD4DXV6T5G Description

Short technical summary and product information.

The EMD4DXV6T5G is a dual Bias Resistor Transistor (BRT) array from On Semiconductor, integrating one NPN and one PNP pre-biased transistor in a single SOT-563 package. Each transistor incorporates a monolithic bias network with a series base resistor (R1 = 47 kΩ) and a base-emitter resistor, simplifying circuit design by eliminating external resistors.

Key electrical characteristics include a maximum collector-emitter voltage of 50 V, a maximum collector current of 100 mA, and a minimum DC current gain of 80 at Ic=5 mA, Vce=10 V. The total device power dissipation is 500 mW at 25°C ambient, with a derating factor of 2.9 mW/°C above 25°C. The saturation voltage is 250 mV maximum at Ib=300 µA, Ic=10 mA.

The device is designed for low-power surface mount applications where board space is at a premium. The SOT-563 package (CASE 463A) is compact and suitable for automated assembly. The operating temperature range is -55°C to +150°C, and the part is Pb-free and RoHS3 compliant (verified from datasheet).

Automotive qualified versions are available under the NSVEMD4DXV6T5G prefix, meeting AEC-Q101 requirements. The standard packaging is tape and reel with 8000 pieces per reel.

EMD4DXV6T5G Quick Information

Product Type: Bipolar Junction Transistor Array, Pre-Biased

Series: EMD4DXV6

Canonical Name: Dual Pre-Biased NPN/PNP Transistor Array, 50V VCEO, 100mA, SOT-563

Subcategory: Bipolar Transistor Arrays

EMD4DXV6T5G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Yes

EMD4DXV6T5G Estimated Pricing

Qty	Low	High
16,000+	$0.04	$0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

EMD4DXV6T5G Features

Dual NPN/PNP pre-biased transistor array.
Rated for 50V collector-emitter voltage.
Maximum collector current of 100 mA.
Surface mount SOT-563 package.
Pb-free and RoHS3 compliant.

EMD4DXV6T5G Applications

Ideal for low-power switching circuits.
Used in portable electronic devices.
Suitable for automotive applications (NSV version).
Reduces component count in bias networks.

EMD4DXV6T5G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the operating temperature range of the EMD4DXV6T5G?

-55°C to +150°C.

What is the package type of the EMD4DXV6T5G?

SOT-563 surface mount package.

Is the EMD4DXV6T5G RoHS compliant?

Yes, RoHS3 compliant and Pb-free.

What is the maximum collector-emitter voltage?

50 V.

What is the maximum collector current?

100 mA.

What is the total power dissipation?

500 mW at 25°C ambient.

Does the part have an automotive qualified version?

Yes, the NSVEMD4DXV6T5G is AEC-Q101 qualified.

Category	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Name	On Semiconductor
AEC Qualified	No
Automotive Grade	Yes
Current	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80
Mounting Type	Surface Mount
Operating Temperature Range	-55 to +150 °C
Power	500 mW
Resistor	47 kΩ
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	SOT-563
Tape & Reel	Yes
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage	50 V